SGER: Nanoelectronic Functional Devices

SGER：纳米电子功能器件

• 批准号: 9523423
• 负责人: Vwani Roychowdhury
• 金额: $ 5万
• 依托单位: Purdue Research Foundation
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1995
• 资助国家: 美国
• 起止时间: 1995-05-15 至 1996-04-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9523423&HistoricalAwards=false
• 关键词: SGER; Nanoelectronic; Functional; Devices

9523423 Roychowdhury Continuing advances in the miniaturization of electron devices have made possible the fabrication of nanoelectric devices with feature sizes in the 1-100nm range. However, it is widely believed that conventional integrated circuit design techniques will become impractical, due to the small size and the low current carrying capacity of nanostructured devices. Proposals which envision novel ways to circumvent this problem have begun to appear in earnest. The majority of these proposals use globally coherent quantum systems to generate computational abilities. We differ from these proposals in that we use semiclassical global models as the basis from which to conceive nanoelectronic functional devices. An additional point of departure, is our assumption that currently perceived limitations to realizing interconnects amongst the nanostructured devices will in time be overcome. Finally, we restrict attention to niche applications, in which the collective activity of a large number of nanostructured devices give rise to useful computational functions. The special purpose functional device concept adopted here can be contrasted with other approaches which envision the design of general purpose computers on the basis of quantum mechanical logic gates. This work has been unified under a particular technology based on the creation of arrays of nanometer-sized metallic islands. We consider different types of network mechanisms for the transfer of electrons between islands. Depending on the types of transport nonlinearities permitted by the network links, we show that it is possible to generated different kinds of global activity in these networks. We show, in addition that it is possible to impart a computational interpretation to these global activities. In particular, we show that within a classical circuit theoretic model, non-monotone nonlinearities in the local transport can yield global associative memory effects. We then show that this interpretation will remain valid even when single-electron effects come into play, provided that the effective capacitance of the nanometallic islands is not too small. We then investigate networks of islands in which the sole nonlinearity arises from single-electronics. These networks are shown to be capable of associative memory effects, as well as yield approximate solutions to certain NP-complete optimization problems, provided that there is sufficient flexibility in the choice of inter-island capacitances. Proposed future work includes: (a) Development of novel theoretical techniques for the analysis and design of nanoelectronic networks, (b) Development of detailed simulators for nanoelectronic functional devices on parallel machines, and (c) Incorporation of novel nanoelectronic device and network mechanisms in functional devices. ***

9523423 Roychowdhury电子设备的微型化持续进展，使得在1-100nm范围内具有功能尺寸的纳米电器设备的制造成为可能。 但是，人们普遍认为，由于纳米结构设备的尺寸较小和电流携带能力，传统的集成电路设计技术将变得不切实际。 设想解决这个问题的新颖方法的建议已经开始认真出现。 这些建议中的大多数都使用全球连贯的量子系统来产生计算能力。 我们与这些建议有所不同，因为我们使用半经典的全局模型作为构想纳米电子功能设备的基础。 另一个出发点是，我们的假设是，当前将纳米结构设备之间互连的局限性及时克服。 最后，我们限制了对利基应用的关注，其中大量纳米结构设备的集体活动产生了有用的计算功能。 此处采用的特殊用途功能设备概念可以与其他方法形成鲜明对比，这些方法在量子机械逻辑门的基础上设想了通用计算机的设计。 这项工作是根据特定技术统一的，基于纳米大小的金属岛阵列的创建。 我们考虑了不同类型的网络机制，用于在岛之间传输电子。 根据网络链接允许的运输非线性类型，我们表明可以在这些网络中生成各种全局活动。 我们表明，除了可以对这些全球活动进行计算解释。 特别是，我们表明，在经典电路理论模型中，本地运输中的非符号酮非线性可以产生全局的关联记忆效应。 然后，我们表明，即使单电子效应发挥作用，这种解释也将保持有效，前提是纳米金属岛的有效电容并不小。 然后，我们研究了唯一非线性源于单电子学的岛屿网络。 这些网络被证明具有关联记忆效应，并在某些NP完全完整的优化问题上产生近似解决方案，前提是在选择岛间电容性方面具有足够的灵活性。 拟议的未来工作包括：（a）开发用于分析和设计纳米电子网络的新型理论技术，（b）在平行机上开发用于纳米电机功能设备的详细模拟器，以及（c）新型纳米电子设备和功能设备中的新型纳米电子设备和网络机制的结合。 ***