二维过渡金属硫化物异质结构的电学性质调控

Because of its unique morphology and wide range of electronic properties, two-dimensional transition metal dichalcogenides have been widely studied and are considered as one of the most ideal material for nanometer devices. Different from a single material, two-dimensional transition metal dichalcogenide heterostructures perform variety of properties and multiple functions, which could be controlled according to the industrial requirement and then design the multi-functional electronic devices with ideal characteristics. This subject is devoted to study the modulation of electronic properties of two-dimensional transition metal dichalcogenide heterostructures. Through different construction method, fabricate heterostructures and search for thermodynamically stable one. To explore the mechanism of electronic properties changes in different condition and discover the relationship between structure and property, and get the intrinsic regulation. Based on the regulation, construct the novel two-dimensional transition metal dichalcogenide heterostructures with specific structure and function, and finally according to these heterostructures, design nano-electronic devices and test whether the devices perform the excellent electron transport property. This study provides the theoretical foundation for the fabrication and application of two-dimensional transition metal dichalcogenide heterostructures and gives feasible and reliable ideas for designing the novel two-dimensional nanostructure from the atomic scale, which is of great importance to develop and design the next-generation nanoelectronic devices.

二维过渡金属硫化物由于其特殊的形貌和宽范围的电学性质一直广受科研工作者关注，被认为是纳米器件的理想的构造单元之一。相较于单一的材料，二维过渡金属硫化物异质结构的性质和功能更加多样化，可以根据需求设计、调控、和组装得到具备理想特征的多功能电子器件。本课题致力于研究二维过渡金属硫化物异质结构的电学性质调控方式，结合不同异质结构构建方法，寻找热动力学稳定的异质结构，探讨其电学性质的变化机理，揭示结构与电学性能之间的内在联系，并总结电学性质调控规律，在此基础上设计出最优化方案，构建出可用于纳米电子器件中的具有特定结构和功能的新型二维过渡金属硫化物异质结构，并搭建纳米电子器件进行验证。为二维过渡金属硫化物异质结构的制备和其在纳米电子工业中的应用提供必要的理论依据，提供从原子尺度出发设计新型二维纳米异质结构的可行思路和可靠依据，这对开发和设计下一代纳米电子器件具有非常重要的意义。

二维过渡金属硫化物异质结构的研究已经取得了较大的进展，但是大部分研究都集中在光致发光现象上，对异质结构的电子迁移率、带隙和电流开关比的关注仍然较少。.基于这些问题，本项目主要研究了二硫化钼、二硫化钨和二硫化钒组成的二维过渡金属硫化物异质结构的电子输运性质。首先通过大数据筛选出三类晶格常数相近的过渡金属硫化物，为了方便构建异质结构，对其稳定性和能带结构进行研究；通过两两组合的方式在二维平面内拼接构建过渡金属硫化物异质结构，我们发现不管是具有半导体性质还是金属性质的二维过渡金属硫化物异质结构，通过改变其中一种材料的比例会改进其电学和电子输运性质。扶手椅型过渡金属硫化物异质结构，通过调节二硫化钒的比例，可以进行能带带隙管理。锯齿型过渡金属硫化物异质结构，拼接比例最少的二硫化钨，可以获得电流开关比较好的负微分电阻效应，而提高二硫化钒的比例，可以提升器件的电子迁移率。.研究结果表明通过二维平面内拼接不同的二维过渡金属硫化物异质结构，可以为在光电子器件、线性电子元件和电子开关等应用中提供理论指导。.

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