纤维状信息存储器活性层设计及存储机理分析

Electronic textiels, which integrate various electronic devices into fabric, have become a fast emerging research area and drawn great intention in recent years. As a basic component of multifunctional electronic textile, wearable/weavable non-volatile memory is critical important for information collecting, processing and transmitting. In this study, we have been preparing a series of active layer materials based on two-dimensional graphitic carbon nitride (g-C3N4) nanosheets through doping, hybridization and functionalization. Then, we propose a prototype of a fiber-shaped non-volatile memory device, in which the highly flexible conductive fiber is used as the conductive electrode. By developing an electrospray technique, the active material can be continuously coated on the outer surface conductive fiber, so that a kind of hybrid fiber with core-shell structure is obtained. By simply cross-stacking two hybrid layer fibers, the weavable fiber-based electronic device is fabricated. The relationship between the properties of active layer and the performance of the fiber-based memory is systematically investigated. Together with first-principle calculations, the working mechanism of the as-fabricated device for data storage can be probed. We believe that this study will pave the way for wearable memory devices with high reliability and tunable performance.

电子织物兼具电子产品和纺织品的功能和特性，具有便携、美观、舒适等人性化设计，是未来电子产品的发展方向。本项目以信息存储器件的可穿戴/编织化为目标，围绕活性层性质与器件存储机理二者的内在关系这一关键问题，以“活性层半导体分子/电子结构设计-纤维状器件构筑-存储机理分析”为主线，发展二维共轭聚合物半导体材料这一活性层体系，从聚合物半导体的分子/电子结构设计出发，利用掺杂、复合、官能化等手段调控基于氮化碳结构单元的二维聚合物分子结构，制备具有不同性质的活性层材料。通过实验测试和第一性原理计算相结合的方式探索活性层性质与其电存储行为的内在关联，揭示活性层与纤维电极二者间的匹配规律，力争在稳定性好、可靠性高、性能可调的纤维状信息存储器件制备上取得突破。

电子织物兼具电子产品和纺织品的功能和特性，具有便携、美观、舒适等人性化设计，是未来电子产品的发展方向。本项目以信息存储器的可穿戴/编织化为目标，围绕功能纤维设计、可编织器件构建、及器件存储机理分析等关键问题开展研究，发展了两种基于碳纳米管的柔性纤维电极构建方案，提出了两种纤维性能调控策略。选择二维共轭聚合物半导体材料石墨相氮化碳纳米片作为活性层，制备了以碳纳米管纤维为芯、石墨相氮化碳纳米片为皮的同轴功能纤维，采用编织的方式构建了纤维基信息存储器，器件表现出一次写入多次读取的特点，开启电压~6.5 V，开关电流比>102，且在高、低导电态都表现出了很好的稳定性。此外，通过电学行为分析和物理模型拟合可以判定器件在开的状态，载流子传输为欧姆电流；器件在关的状态，载流子传输表现为隧穿电流和空间电荷限制电流。

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