拓扑绝缘体基复合材料的高灵敏光响应在近-中红外超快波导激光和光波导探测器的应用研究

The two fundamental components of on-chip integrated photonics system are waveguide laser and photodetector, respectively operating as signal source and signal acquisition. The application of two-dimensional nanomaterial in the waveguide laser and photodetector can optimize their structure and photoelectric properties, which is attractive for the development of integrated photonics field. Therefore, we choose two-dimensional topological insulators Bi2Te3 and Bi2Se3 with broadband high photoresponsivity, to combine with MoS2 and black phosphorus to prepare some different heterojunctions. MoS2 and black phosphorus have a special property that their energy band structures depend on their layers. We will study the dependence of the photoelectrical properties on the microscopic structure of heterostructure, and give a universal method to design with ultrahigh photoresponsivity. Based on the improvement on waveguide fabrication technique, we will fabricate high-quality laser waveguides and photodetector waveguides. We will also optimize on the preparation of heterostructure and design of the waveguide devices. Finally, with the topological insulator-based heterostructure, efficient, low-energy-consumption, and stable Q-switched and mode-locked lasers in the 1.0-2.0μm wavelength region will be realized. Further, a multchannel photodetector with ultrahigh photo sensitivity at 1-5um can be also achieved. Our results demonstrate the potential of topological insulator-based heterostructure for the applications in nanoelectronic devices and integrated photonics system.

作为信号源的波导激光和用于光信号采集转换的波导光探测器是片上集成光学系统的基本组成器件.用优异光电特性的二维纳米材料提高这两种波导器件性能，对于正在快速发展的集成光学具有重要意义.本项目针对此需求,选择具有宽带光响应的二维Bi2Te3、Bi2Se3拓扑绝缘体,分别与具有层数确定能带特性和高电子迁移率的二维过渡金属硫化物、黑磷复合，制备多种纳米异质结构;阐明不同材料复合的微观结构改性宏观光电性能的机制，总结出普适性的宽带高灵敏光响应复合材料设计方法;制备高质量的多波段激光波导和探测器波导;建立二维复合材料波导激光和波导光探测器的理论模型,优化二维复合材料与光波导耦合技术以及多通道波导设计方法,基于二维复合材料实现1-2μm波段调Q和锁模波导激光，以及1-5μm高灵敏、快响应时间的多通道波导光探测器；为二维复合材料的设计、微型波导光电器件制作提供新思路与指导,以满足集成光学的发展需求.

本项目旨在探索多种新型拓扑和量子光电材料在新一代集成光子系统的应用价值，以满足当前对波导短脉冲激光、光探测器、全光调制器、真空紫外高次谐波光源等集成光学器件的紧迫需要。在执行期间，遵循并拓展了研究方案和计划，较好的完成了本项目的研究目标。主要研究成果如下：.（1）通过复合异质结、离子掺杂、新结构设计等技术手段实现了多种量子材料的高质量制备：WSTe、WSeTe、MoSTe、MoWTe、二维有机无机杂化钙钛矿、Bi2Te3/perovskite、WP2拓扑半金属、锑烯半金属量子点等；（1）实现了拓扑三元合金系列WSTe、WSeTe、MoSTe, MoWTe饱和吸收体的0.6-2.0µm调Q脉冲激光器，与其二元母体的结果相比可将脉冲宽度压缩50%以上；（3）实现了拓扑绝缘体基复合材料Bi2Te3/perovskite调Q的2.0µmTm:YAP脉冲波导激光，最短脉冲可达207ns，相比纯Bi2Te3调Q脉冲宽度压缩了310%，脉冲能量提高了30%；（4）成功制备了Bi2Te3-Ta2O5波导探测器，并理论上对宽波导波导探测器的色散控制优化进行了深入探索;（5）实现了高灵敏、快速响应的离子掺杂Co:BiCuSeO光热电探测器，响应波段覆盖0.4-1.6µm，证明了光热电机制可有效克服常规半导体响应受带隙所限的缺点；(6)基于新型窄带隙二维有机无机杂化钙钛矿实现了高灵敏的光电导探测器，响应波段可达到0.4-1.1µm;（7）实现了锑烯半金属量子点的高效等离激元吸收，实现了弱光对强飞秒激光的全光开关，调制波段1.6-2.3 μm，强度调制比高达1:10^7，是相关文献报道的最高水平；(8)在拓扑材料WP2上实现了高达10阶的高次谐波产生，受激辐射发光可达到190nm真空紫外，证明拓扑测材料高次谐波技术可实现用于高端光刻的超快深紫外激光。. 以上工作超额完成了本项目预期的目标，在波导激光，波导探测器，全光计算，强激光操控防护、拓扑材料能带精细测量等领域具有重要的应用潜力，相关研究成果已撰写9篇论文发表在Nature communication, Advanced Materials, Advanced Optical Materials等SCI期刊，还有数篇论文正在投稿和撰写中。

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