弹性基底上二硫化钼的可控制备及其在可拉伸电子器件中的应用

With the rise of wearable and implantable electronic devices and the rapid developments of humane robots, to achieve electronic devices with high transparency, flexibility, and stretchability is a main goal in electronic area. A very potential solution is to combine the atomically thin two-dimensional (2D) materials with elastomer substrates. This project is to systematically study molybdenum disulfide (MoS2) on elastomer substrates in stretchable electronics, which will cover the material growth, transfer assembly, mechanical model as well as device fabrication. Firstly, by engineering the confined chemical vapor deposition reaction through macro- and micro-synergistic fashion and developing precise position transfer technology, layer number and morphology controlled preparation of MoS2 on elastomer substrates will be realized. Then we will explore the influencing factors and their dependences on the fracture and sliding phenomenon of MoS2 on elastomer substrates under tensile strain, sum up the strategies of promoting interlayer sliding and reducing intralayer fracture, and eventually fabricate MoS2 tensile-electrically stable electronic devices on elastomer substrates. The significance of this project will be to understand the mechano-electrical stability of 2D materials, mainly the impact of tensile strain on their morphology and photoelectronic properties. On the other hand, for the first time it extends 2D materials to the field of stretchable electronic skin, seeking universal strategies for obtaining 2D materials based stretchable electronic devices.

随着可穿戴、植入式电子设备的兴起以及人性化机器人的发展，透明柔性和可拉伸是当前电子器件追求的目标之一。将仅有原子级厚度的二维材料组装至弹性基底表面，有望实现柔性透明可拉伸电子器件。本项目将对弹性基底上的二硫化钼（MoS2）开展系统基础研究，从材料生长、转移组装、力学模型到器件制备，全面探索其在可拉伸电子器件的应用。首先通过宏观和微观协同限域表面反应，化学气相沉积生长MoS2，并发展精准定位组装技术，实现弹性基底上MoS2层数和形貌可控制备。然后探讨弹性基底在拉伸形变时其上MoS2断裂和滑移现象的影响因素及变化规律，进而总结出促使MoS2层间滑移、减少层内断裂的策略，最终制备出弹性基底上MoS2可拉伸电子器件。本项目一方面将研究拉伸对本征二维材料形貌和光电性质的影响，深入认识与理解二维材料力学电学稳定性；另一方面率先将二维材料拓展至可拉伸电子皮肤领域，寻求获取可拉伸二维材料器件的普适性策略。

二维材料在透明、柔性电子器件中拥有良好发展前景及潜在应用价值，但现阶段研究制备的二维材料柔性电子器件仍存在很多亟待解决的基础问题。本项目拟利用柔韧性好、电学性能优异的2D二硫化钼（MoS2）作为研究对象对上述问题展开探索。通过化学气相沉积法、精准定位组装技术、无损转移技术等在弹性基底上制备不同层数、不同层间距及不同堆垛角度的MoS2；探究其拉曼、荧光、滑移断裂等随拉伸应变变化的规律；根据前期研究，提出制备基于MoS2的高拉伸性电子设备的可行性方案并进行相应实验、测试；以期在弹性基底上低维材料的可控制备、高性能器件构筑这一领域中做出重要的基础研究工作。拟展开的研究内容如下：.[1] 化学气相沉积方法限域生长MoS2及其生长机理研究。.[2] 精准定位组装MoS2至弹性可拉伸基底上。.[3] 拉伸形变时弹性基底上MoS2层间滑移及裂痕产生的边界条件。.[4] 弹性基底上MoS2电子器件的制备及拉伸性能研究。.[5] 基于MoS2自组装折叠结构的物理性质探究。.[6] 基于TMDs异质结构不同堆垛角度的物理性质探究。.[7] 基于少层MoS2及其薄膜的可拉伸光电探测器和光感受器的成功构筑。

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