锰钴镍氧化物薄膜的光电效应及其在辐射探测中应用的研究

Manganese-Cobalt-Nickel transition metal oxide(Mn-Co-Ni-O) is an important oxide material. As a thermistor detecting material, Mn-Co-Ni-O has successful applications in aerospace devices because of its high temperature coefficient of resistance and broad band. The research about the semiconductor energy band characteristics of Mn-Co-Ni-O is placed in the blank appearance. The main route of this research project is to prepare p-type and n-type Mn-Co-Ni-O films according to the relationship between their conductivity type and component ratio. And the detecting structure of Mn-Co-Ni-O film pn-junction should be designed and fabricated, which can be used to prepare the new type photoelectric detector with 250-1700nm broad band by investigating its photoelectric effect. To further develop the application research of Mn-Co-Ni-O films in radiation detection, particularly in imaging at room temperature, we should carry out resaeach of the new type photoelectric detector with broad band to realize high quality imaging. The implementation of this project will impel Mn-Co-Ni-O to be not only infrared thermistor detecting material with extensive application, but also potential photoelectric detecting material with rapid response and high detectivity. The success of the project will have important signification on the development of the new generation of good performance detectors with high sensitivity and high resolution.

锰钴镍过渡金属氧化物（Mn-Co-Ni-O）是一种重要的氧化物材料，具有高电阻温度系数和宽的光响应波段，作为热敏探测材料在航空航天器件上有着成功的应用，而有关该材料半导体能带特性的研究几乎处于空白。本项目研究思路是根据Mn-Co-Ni-O材料的导电类型与其组分比例相关的特性，生长导电类型分别是P型和N型的Mn-Co-Ni-O薄膜，设计并制备出Mn-Co-Ni-O薄膜PN结探测结构，研究其光电效应，可用于制备250～1700nm宽波段的新型光电探测器。进一步开展Mn-Co-Ni-O薄膜在辐射探测中的应用研究，特别是在室温成像技术中的应用，也促使我们要深入研究该新型宽波段光电探测器件，来实现高质量的成像。项目的实施将使Mn-Co-Ni-O不仅是应用广泛的红外热敏探测材料，而且将成为响应更为迅速、探测率更高的光电探测材料。该项目的实现将对我国新一代高灵敏度、高分辨率探测器的发展具有重要的意义。

锰、钴、镍过渡金属氧化物（Mn-Co-Ni-O）是一种在航空航天器件上有着成功应用的红外热敏探测材料，具有丰富的物理性质，利用该材料的半导体特性和器件结构设计，实现Mn-Co-Ni-O作为新型光电探测材料的应用存在重要的科学意义和实用价值。本项目采用化学溶液沉积法制备了多种Mn-Co-Ni-O系薄膜，通过对薄膜的微结构、光学和电学等性质的研究，获得了组分配比、掺杂、膜厚等参数与薄膜物理特性的关联性。根据Mn-Co-Ni-O材料的导电类型与其组分比例相关的特性，制备出Mn1.56Co0.96Ni0.48O4/NiMn2O4薄膜PN异质结，其电流-电压（I-V）曲线表现为整流特性。特别是我们在Mn-Co-Ni-O材料和宽禁带半导体材料ZnO的异质结研究取得了突破，成功制备出Mn1.56Co0.96Ni0.48O4/ZnO异质结，其I-V曲线为整流特性，不同波长光照下观测到光电流响应，Mn1.56Co0.96Ni0.48O4/ZnO异质结具有光伏效应，可用于制备紫外-可见-近红外宽波段的新型光电探测器。此外，为拓展Mn-Co-Ni-O薄膜的应用领域，对薄膜器件制备工艺进行了探索，证实了采用半导体器件工艺制备Mn-Co-Ni-O薄膜型多元探测器件的可行性。项目的完成使得Mn-Co-Ni-O不仅是应用广泛的红外热敏探测材料，而且还成为新型的宽波段光电探测材料，促进我国新一代探测器的发展。

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