树枝状含硼大分子的有序、可控性硅晶面掺杂研究

Manipulating single or a few dopant atoms at a large scale is not only a key solution to the threshold voltage drifting of deep nanometer scale CMOS transistors caused by the randomness of ion implantation, but also an important technology for developing new devices based on single atoms. In this research project, we propose to utilize hyperbranched polymerization of glycidol to synthesize boron-containing macromolecules 1 and 2 with a large number of hydroxyl chemical groups at their terminals. Under external ultraviolet radiation or heating conditions, boron-containing compounds 1 and 2 are then respectively self-absorbed on Si (100) surface through O-Si covalent bond. After thermal annealing, the doped silicon surface morphology and chemical composition are characterized with use of XPS, AFM, and SIMS methods. Moreover, HF etching and electron beam lithography techniques are finally used to orderly position single or a few boron doping atoms at ultrashallow surface of silicon devices, and their electrical properties are further analyzed within semiconductor test system. The main purpose of this research project is the use of molecular self-assembly and micro/nano fabrication technologies, to achieve single-atom devices with ordered and controllable boron doping, fabricate single-atom transistors with new prototype, and provide novel technique and approach for further development of micro-/nano-electronic devices.

大规模操纵单个或几个掺杂原子，对解决深纳米CMOS晶体管无序掺杂引起的开启电压漂移及探索新型单原子器件具有重要的研究价值。本研究项目尝试通过缩水甘油的超支化聚合反应，合成具有树枝状结构的含硼高分子化合物1和2。该类聚合物的末梢含有大量的羟基官能团，采用紫外辐射及加热等外界激励方式，可通过O-Si共价键自组装链接到本征Si（100）表面。利用XPS、AFM和SIMS等表征手段，可系统解析经高温退火掺杂后的硅表面形貌及化学成份。同时，利用HF化学蚀刻及电子束曝光等微纳加工工艺，结合分子自组装技术，尝试有序、定点地制备单个或几个硼原子掺杂硅晶半导体器件，并对其进行系统的电学及综合物性表征。本项研究的主要目的就是利用分子自组装及微纳加工等技术，实现硅基半导体的单原子硼有序、可控性掺杂，成功构筑新型单原子晶体管器件，为微纳电子器件的进一步发展提供新技术和新途径。

大规模操纵几个乃至单个掺杂原子，对解决深纳米CMOS晶体管无序掺杂引起的开启电压漂移及探索新型单原子器件具有重要的研究价值。基于以上情况，本研究结合“自下而上”和“自上而下”两种方式，实现硅基半导体的硼原子有序、可控性掺杂。.首先，我们通过缩水甘油的超支化聚合反应，合成得到树枝状结构的含硼高分子化合物。使用加热反应方式，将其自组装链接到半导体硅表面。利用XPS、AFM和SIMS等表征手段，系统解析经高温退火掺杂后的硅表面形貌及化学成份。随后，采用湿法蚀刻及电子束曝光等加工工艺，结合分子自组装技术，有序、定点地制备约10 nm宽的分子线掺杂器件，并对其进行系统的电导性能表征。另外，我们进一步开发出半导体表面无碳掺杂和超浅层掺杂等新工艺流程。本研究项目的顺利实施可成功构筑新型单原子晶体管，为微纳电子器件的深入发展提供新技术和新途径。

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