AlGaN/GaN HFET极化散射效应与外界静电场耦合作用机理研究

AlGaN/GaN heterostructure field effect transistor (HFET) has a great application prospect in national defense industry and national economy, because of its excellent performance. An external electrostatic field will act on AlGaN/GaN HFET devices through converse piezoelectric effect. Therefore, in addition to the emerging new technologies, external electrostatic field can also become a design dimension of AlGaN/GaN HFET. However, there are few studies on this aspect at present. It seriously restricts a further improvement of device performance and application potential. This project intends to carry out coupling mechanism research of AlGaN/GaN HFET polarization scattering effect and external electrostatic field. With combination of theory and experiment, this project will establish polarization Coulomb scattering theory model in the external electrostatic field, revealing the deep coupling mechanism. It will put forward new ideas and new methods for AlGaN/GaN device design by applying the external electrostatic field. It will also establish a relationship between the external electrostatic field and device parameters, promoting device optimization under different application scenarios. It will provide necessary guidance and effective support for the extensive and important application of AlGaN/GaN HFET in aerospace, weapons and equipment, wireless communication, power transmission and other fields of national defense and military industry and national economy.

AlGaN/GaN异质结场效应晶体管以其优异的综合性能，在国防军工和国民经济领域有着巨大的应用前景。外界静电场会通过逆压电效应作用于AlGaN/GaN器件，因此，除了目前不断涌现的新技术、新工艺，外界静电场同样可以成为调制器件性能的设计维度，然而目前该方面的研究极少，严重制约着器件性能的进一步提升与应用潜力。本项目拟开展AlGaN/GaN器件极化散射效应与外界静电场耦合作用机理研究，结合理论与实验，建立外界静电场中极化库仑场散射理论模型，揭示深层次耦合作用机理，提出通过主动施加外界静电场提升器件性能的新思路、新方法，确立外界静电场参数与器件主要特性参数间的调制映射关系，促进不同应用场景需求下器件针对性的设计与性能优化，为AlGaN/GaN器件在航空航天、武器装备、无线通讯、电力传输等国防军工和国民经济领域的广泛与重要应用提供必要指导和有效支撑。

AlGaN/GaN异质结场效应晶体管（HFET）在国防军工和国民经济领域有着巨大的应用前景和战略应用价值，为探索新的器件性能优化维度，进一步提升AlGaN/GaN HFET器件性能，本项目开展了AlGaN/GaN HFET极化散射效应与外界静电场耦合作用机理研究，基于GaN基器件中独特的极化散射效应，分析了外界静电场对AlGaN/GaN HFET基本特性参数的影响，建立了外界静电场中AlGaN/GaN HFET极化库仑场散射理论模型，阐明了AlGaN/GaN HFET极化散射效应与外界静电场耦合作用机理，确立了通过主动施加外界静电场提高AlGaN/GaN HFET性能的新设计维度。结果表明，外界静电场能通过逆压电效应耦合作用于AlGaN/GaN HFET器件内部，改变器件内部极化电荷分布和极化库仑场散射强度，正向静电场能有效提升器件综合电学性能，而且栅漏间距越小，性能提升作用越明显，证明通过施加外界静电场实现AlGaN/GaN HFET性能优化是可行的，而且通过调整器件尺寸可以调节性能优化程度，该方法不受限于器件制备工艺或封装条件，具有简便易行的独特优势，将为GaN基器件微观机理分析以及性能提升提供新维度，促进GaN基器件在空间攻防、无线通讯、电力电子等领域的重要应用。

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