基于光子晶体微腔类EIT效应的MZI全光开关基础理论和关键技术研究

In recent years, in order to increase the optical communication bandwidth and the information processing rate, the field of high speed modulation format conversion and high rate phase switching is very concerned. It is proposed that the phase shift multiplier effect in analogy to electromagnetically induced transparency (EIT) be introduced into the all-optical Mach-Zehnder Interferometer (MZI) switches in this project. When the EIT-like waveguide system structure satisfies a certain phase conditions, the transmission spectrum phase shift is doubled along with the phase shift of line waveguide. Based on the new physical effect, we combine with the phase shift multiplier effect in EIT-like and the MZI switching principle, and carry out studies on the new switching mechanism and key technologies. We'll firstly research the relationship between the phase shift multiplier effect in EIT-like and the enhanced Kerr effect in slow light photonic crystal waveguide of MZI arm. Next, we research the influence on transmission peak characteristics that produced by phase shift of the waveguide which between the two nanocavities on one MZI arm. Finally, we research the key technologies for fabricating MZI switches. Our studies try to solve the questions of high pump light power and large device size of MZI all optical switches. This project shows a new direction for chip integration, switching at ultralow pump power and picosecond optical switches. It is also a new direction for the microstructure photonics device in quantum information processing.

为增加光通信带宽提高信息处理速率，近年来高速率码型转换或高速相位开关的研究领域备受关注。本项目将类电磁诱导透明(EIT)的相移倍增效应引入光通信器件马赫曾德尔干涉仪(MZI)开关上。该类电磁诱导透明波导结构满足一定的相位条件时，输出的透射峰相移值相对于线波导相移值产生数量上倍增效应。基于这种物理效应，开展类电磁诱导透明相移倍增效应与光通信器件MZI全光开关原理相结合的开关新机理和关键技术的研究：研究光子晶体MZI臂上慢光增强kerr效应和类EIT相移倍增效应之间的关系，研究Kerr效应诱导单臂双腔间的波导折射率产生的相移对透射峰特性的影响，最后研究实现MZI全光开关的关键技术。上述研究对解决目前MZI全光开关需要高的泵浦光功率、器件尺寸无法进一步缩小等问题进行了尝试。为实现芯片集成，超低泵浦光功率，皮秒量级的全光开关以及量子信息处理中的光子器件集成展示了一个新的方向。

本项目将电磁诱导透明(EIT)的相移倍增效应引入光通信器件光子晶体马赫曾德尔干涉仪(MZI)开关上。研究了光子晶体模式场的布洛赫态和传输中的后向散射损耗和平面外损耗两种损耗机制。研究光子晶体MZI臂上慢光增强kerr效应和类EIT相移倍增效应之间的关系。将光波的EIT引深到等离激元方向，进一步探讨了等离激元spp类EIT，对其进行了理论研究和仿真，以获得衍射极限，亚波长尺寸的光开关器件。实验部分生长了结构芯片、解决了ICP刻蚀光子晶体尺寸变小、不规则形的问题，进行了大量是工艺参数的优化工作。获得较完美的光子晶体孔型，获得了MZI开关的全结构。测量了系统信号光透射谱。为研制低能耗，超快和小尺寸全光器件器件进行了尝试。为实现芯片集成量子信息处理中的光子器件研究展示了一个新的方向。

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