Nanovoids in semiconductors and defect dynamics: a path to the universal substrate

半导体中的纳米空隙和缺陷动力学：通向通用基材的道路

• 批准号: RGPIN-2022-04367
• 负责人: Arès, Richard
• 金额: $ 3.35万
• 依托单位: Université de Sherbrooke
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2022
• 资助国家: 加拿大
• 起止时间: 2022-01-01 至 2023-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=754395
• 关键词: Nanovoids; semiconductors; defect; dynamics; path

The next decade will see a perfect storm of defining transformations of society through the so-called "digital revolution", driven by a tsunami of technologies, like quantum computing and data encryption, artificial intelligence, self-teaching devices, systems and autonomous vehicles. New data transport technologies like 5G and massively distributed networks like the Internet of Things will also profoundly change the way we live. Each nation will try to position itself to secure a strong supply chain, while preserving its independence and security. Many, if not most of these technologies relie on semiconductors, and are fabricated on silicon as the main host material. The market demands and global competition between nations, exerts massive pressure on the industry to provide semiconductor-based devices that are evermore efficient, mobile, energy efficient, etc. In order to achieve that, different materials used in these devices must be integrated onto a piece of Si and be produced in the great fabs of the world. While some attempts to integrate different semiconductors on Si have been somewhat successful, a robust, cost-effective and high performance technique remains to be developed. This proposal will explore ways to address the integration challenge, by leveraging some major breakthroughs that were achieved in the last 6 years in my group. We have developed processes that combine a high level of control over the creation of nano-porous semiconductors, like Ge and Si, with the ability to integrate graphene within their structure, to create a new family of 2D/3D nano-composites with new, exciting and most importantly « tunable » properties. My program will explore avenues using these nano-composites, to create solutions for the integration of semiconductors with different structures and properties on the Si platform, without sacrificing performance. First we will develop new nano-composites based on new semiconductors, with the ultimate goal to create the first nano-composite with a tunable crystal, by using InGaAs as the base structure. This material with a tunable crystal will be instrumental for the integration of devices. I will then use this base to demonstrate the integration of specific devices and show the potential of the technique. Other integrations, such as on-chip energy storage and harvesting will be demonstrated through the use of the nanocomposite as the main medium. This program will allow me to : 1)expand my team's leadership and impact in the field of graphene based nanocomposites, by strengthening our level of expertise on the different aspects of the material family and 2)to target the high impact technological challenge of defect-free heteroepitaxy and on-chip energy management. 3)explore other uses will be explored like the nanocomposite as a highly sensitive and compact gas sensor for "lab-on-chip" applications.

接下来的十年将看到社会的完美风暴，即所谓的“数字革命”，量子计算和数据加密，人工智能，自我教育设备，系统和自动驾驶技术，例如5G和5G和自动驾驶技术。大量的分布式网络像HINTENT一样，尝试将自己定位为强大的供应链，同时保存是独立性和安全性的，即使不是大多数这些技术。为了实现这一目标，在行业上提供了更有效，移动，能源效率等的设备，必须将使用的不同材料集成到一块Si上脚趾世界。在过去的6年中，我们已经开发了一些重大的突破，而在我小组中，有些尝试将不同的半导体整合到SI上对纳米多孔半导体的创建的高度控制的过程以及能够整合石墨烯的能力，可以与新的，令人兴奋的，最重要的是“我的计划”创建一个新的D/3D纳米复合家族大道在SI平台上使用纳米复合材料，而无需牺牲性能。该计划的技术将允许我：1）扩大我的团队在基于石墨的纳米复合物领域的影响作为“实验室芯片”应用的高度敏感和紧凑的气体传感器。