On-chip colloidal quantum dot devices for near-infrared optoelectronics

用于近红外光电子学的片上胶体量子点器件

• 批准号: RGPIN-2019-04664
• 负责人: Wang, Xihua
• 金额: $ 2.04万
• 依托单位: University of Alberta
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2021
• 资助国家: 加拿大
• 起止时间: 2021-01-01 至 2022-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=737771
• 关键词: chip; colloidal; quantum; dot; devices

Colloidal quantum dots (CQDs) are solution-processed semiconductors that their energy levels can be altered by changing CQD sizes. CQD doped materials and strongly coupled CQD films are reported for various optoelectronic devices, including light-emitting diodes (LEDs), lasers, photodetectors and solar cells. While CQD optoelectronics have a bright future, high-performance CQD optoelectronic devices requires CQD films with superior electronic properties (e.g. electron mobility) in the devices and an optimized device architecture for each application. Thus, the research problems of developing CQD devices for optoelectronics are complex and challenging, requiring a great deal of innovation and originality to improve CQD films and engineer CQD-integrated devices. Near-infrared (NIR) light generation and detection have many applications, such as optical communications, medical imaging, night vision cameras, hyperspectral sensing, LiDAR for self-driving cars. There is also a demand to monolithically integrate photonic devices onto CMOS electronic circuits (Si chips). To tackle these important applications, the main research objectives are to 1) develop high electron/hole mobility CQD films and CQD inks that can produce such films on Si chips; 2) demonstrate fast NIR photodetectors and NIR image sensors by integrating CQDs onto Si chips; 3) achieve optically pumped NIR continuous-wave CQD lasers using blue LEDs. The proposed program covers research and training students on CQD synthesis and film processing, device modeling, fabrication and characterization of CQD photodetectors and lasers, and integration of CQDs on Si chips. It will enable CQDs as future materials for light sources and photodeteoctors in integrated silicon photonic circuits. The proposed research program targets knowledge advance in the field of optoelectronics and micro-/nanofabrication. The novelty and expected significance to the research field include: it would address the major challenge of developing CQD films with superior electronic properties; it would provide new CQD device architectures using CQD-on-chip technologies; finally, it would enable high-performance CQD devices for NIR optoelectronics. Over the past decade, Canadian photonics industry has benefited from strong global growth in optoelectronics market for the country's leading role in photonics R&D. Now, growing demand for infrared image sensors and lasers is predicted by increased needs in the security application and optical systems for data centers, as well as new markets from hyperspectral imaging for agriculture, mining and self-driving cars. The proposed works will help Canada to assure its leadership in photonic R&D on low-cost and high-performance NIR optoelectronic devices.

胶体量子点 (CQD) 是经过溶液处理的半导体，可以通过改变 CQD 尺寸来改变其能级。据报道，CQD 掺杂材料和强耦合 CQD 薄膜可用于各种光电器件，包括发光二极管 (LED)、激光器、光电探测器和太阳能电池。虽然 CQD 光电器件有着光明的前景，但高性能 CQD 光电器件需要器件中具有优异电子性能（例如电子迁移率）的 CQD 薄膜以及针对每种应用的优化器件架构。因此，开发用于光电子的 CQD 器件的研究问题是复杂且具有挑战性的，需要大量的创新和原创性来改进 CQD 薄膜和设计 CQD 集成器件。近红外 (NIR) 光产生和检测有许多应用，例如光通信、医学成像、夜视摄像头、高光谱传感、自动驾驶汽车激光雷达。还需要将光子器件单片集成到 CMOS 电子电路（硅芯片）上。为了解决这些重要的应用，主要研究目标是1）开发高电子/空穴迁移率CQD薄膜和可以在Si芯片上生产此类薄膜的CQD墨水； 2) 通过将 CQD 集成到 Si 芯片上来演示快速 NIR 光电探测器和 NIR 图像传感器； 3) 使用蓝色 LED 实现光泵浦近红外连续波 CQD 激光器。拟议的项目涵盖 CQD 合成和薄膜加工、器件建模、CQD 光电探测器和激光器的制造和表征以及 CQD 在 Si 芯片上的集成方面的研究和培训学生。它将使得 CQD 成为集成硅光子电路中光源和光电探测器的未来材料。 拟议的研究计划的目标是光电子和微/纳米制造领域的知识进步。该研究领域的新颖性和预期意义包括：它将解决开发具有优异电子性能的 CQD 薄膜的主要挑战；它将使用 CQD 片上技术提供新的 CQD 器件架构；最后，它将为近红外光电子学提供高性能 CQD 设备。过去十年，加拿大光子学行业受益于全球光电市场的强劲增长，加拿大在光子学研发方面处于领先地位。现在，由于数据中心安全应用和光学系统的需求增加，以及农业、采矿和自动驾驶汽车高光谱成像的新市场，预计对红外图像传感器和激光器的需求将不断增长。拟议的工作将帮助加拿大确保其在低成本和高性能近红外光电器件光子研发方面的领导地位。