III-V Semiconductor Platforms and Devices for Nonlinear Integrated Photonics
用于非线性集成光子学的 III-V 半导体平台和器件
基本信息
- 批准号:RGPIN-2020-03989
- 负责人:
- 金额:$ 2.04万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Discovery Grants Program - Individual
- 财政年份:2020
- 资助国家:加拿大
- 起止时间:2020-01-01 至 2021-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
We propose to explore a family of III-V semiconductor material platforms for photonic integrated circuits (PICs) serving a variety of applications. Photonic integrated circuits are tiny chips, typically made of semiconductor materials, which can control the flow of light and the way it interacts with matter. One can contrast this with electronic microchips which control the flow of electricity.
PICs are populated with tiny devices that operate on light. These include: light emitting devices called integrated semiconductor lasers; light stirring devices called integrated optical waveguides, serving the role of mirrors and lenses on-a-chip; modulators, imprinting information on light streams, and detectors that absorb light and detect the amount of the optical power it carries. All these devices require sophisticated designs, the development of novel fabrication processes, and testing to ensure their optimal operation.
Our specific research goal is to develop integrated optical platforms and devices suitable for nonlinear optical interactions, whereby the frequency (or colour) of light can be modified by the nature of these light-matter interactions. Nonlinear optical interactions significantly enhance the existing applications of PICs and open a whole range of new applications. One such example is optical communication networks where existing technology has reached its peak performance. The introduction of emerging technologies such as autonomous vehicles, 5G networks, and Smart Cities will strain these networks even more. This research program is a key component in bringing all-optical signal processing into modern optical communication networks to address such challenges. This goal will be achieved in part by developing integrated nonlinear photonic devices based on the group of III-V semiconductors. Once developed, this technology will revolutionize the industry of optical communications by breaking into the new levels of capacity of information transfer and storage.
Further, photonic integration has countless other applications, whose impact we are currently unable to predict. Medical imaging and sample analysis, tamper-proof communications, and the development of new scientific equipment are only some areas that will be greatly advanced by photonic integration.
我们建议探索一个用于光子综合电路(图片)的III-V半导体材料平台,该平台为各种应用提供。光子积分电路是微小的芯片,通常由半导体材料制成,可以控制光的流动以及与物质相互作用的方式。可以将其与控制电流流的电子微芯片对比。
图片堆满了在光线下运行的微小设备。其中包括:发光设备,称为集成半导体激光器;轻度搅拌的设备称为集成的光学波导,在芯片上起镜子和镜头的作用;调节器,在光流上的烙印以及吸收光线并检测其携带的光功能量的探测器。所有这些设备都需要复杂的设计,新型制造过程的开发以及测试以确保其最佳操作。
我们的具体研究目标是开发适用于非线性光学相互作用的集成光学平台和设备,从而可以通过这些光 - 物质相互作用的性质来修改光的频率(或颜色)。非线性光学相互作用可显着增强图片的现有应用,并打开一系列新应用。一个这样的例子是光学通信网络,现有技术达到了高峰性能。引入新兴技术,例如自动驾驶汽车,5G网络和智能城市,将更加妥协这些网络。该研究计划是将全光信号处理带入现代光学通信网络以应对此类挑战的关键组成部分。该目标将部分通过基于III-V半导体组开发集成的非线性光子设备来实现。一旦开发,这项技术将通过闯入信息传输和存储的新水平来彻底改变光学通信的行业。
此外,光子集成具有无数的其他应用,我们目前无法预测其影响。医学成像和样本分析,防篡改的通信以及新科学设备的开发只是某些领域,这些领域将通过光子整合而大大提高。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Dolgaleva, Ksenia其他文献
Local-field effects in nanostructured photonic materials
- DOI:
10.1364/aop.4.000001 - 发表时间:
2012-03-01 - 期刊:
- 影响因子:27.1
- 作者:
Dolgaleva, Ksenia;Boyd, Robert W. - 通讯作者:
Boyd, Robert W.
Using surface lattice resonances to engineer nonlinear optical processes in metal nanoparticle arrays
- DOI:
10.1103/physreva.97.053817 - 发表时间:
2018-05-15 - 期刊:
- 影响因子:2.9
- 作者:
Huttunen, Mikko J.;Rasekh, Payman;Dolgaleva, Ksenia - 通讯作者:
Dolgaleva, Ksenia
Nonlinear photonics on-a-chip in III-V semiconductors: quest for promising material candidates
- DOI:
10.1364/ao.56.005532 - 发表时间:
2017-07-01 - 期刊:
- 影响因子:1.9
- 作者:
Saeidi, Shayan;Awan, Kashif M.;Dolgaleva, Ksenia - 通讯作者:
Dolgaleva, Ksenia
Prediction of an extremely large nonlinear refractive index for crystals at terahertz frequencies
- DOI:
10.1103/physreva.92.023809 - 发表时间:
2015-08-07 - 期刊:
- 影响因子:2.9
- 作者:
Dolgaleva, Ksenia;Materikina, Daria V.;Kozlov, Sergei A. - 通讯作者:
Kozlov, Sergei A.
Geometry-dependent two-photon absorption followed by free-carrier absorption in AlGaAs waveguides
- DOI:
10.1364/josab.440293 - 发表时间:
2021-12-01 - 期刊:
- 影响因子:1.9
- 作者:
Espinosa, Daniel H. G.;Harrigan, Stephen R.;Dolgaleva, Ksenia - 通讯作者:
Dolgaleva, Ksenia
Dolgaleva, Ksenia的其他文献
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{{ truncateString('Dolgaleva, Ksenia', 18)}}的其他基金
III-V Semiconductor Platforms and Devices for Nonlinear Integrated Photonics
用于非线性集成光子学的 III-V 半导体平台和器件
- 批准号:
RGPIN-2020-03989 - 财政年份:2022
- 资助金额:
$ 2.04万 - 项目类别:
Discovery Grants Program - Individual
III-V Semiconductor Platforms and Devices for Nonlinear Integrated Photonics
用于非线性集成光子学的 III-V 半导体平台和器件
- 批准号:
RGPIN-2020-03989 - 财政年份:2021
- 资助金额:
$ 2.04万 - 项目类别:
Discovery Grants Program - Individual
Nanophotonic devices and nanostructured materials for enhanced nonlinear optical interactions and optical signal processing
用于增强非线性光学相互作用和光信号处理的纳米光子器件和纳米结构材料
- 批准号:
RGPIN-2014-05359 - 财政年份:2019
- 资助金额:
$ 2.04万 - 项目类别:
Discovery Grants Program - Individual
Nanophotonic devices and nanostructured materials for enhanced nonlinear optical interactions and optical signal processing
用于增强非线性光学相互作用和光信号处理的纳米光子器件和纳米结构材料
- 批准号:
RGPIN-2014-05359 - 财政年份:2018
- 资助金额:
$ 2.04万 - 项目类别:
Discovery Grants Program - Individual
Nanophotonic devices and nanostructured materials for enhanced nonlinear optical interactions and optical signal processing
用于增强非线性光学相互作用和光信号处理的纳米光子器件和纳米结构材料
- 批准号:
RGPIN-2014-05359 - 财政年份:2017
- 资助金额:
$ 2.04万 - 项目类别:
Discovery Grants Program - Individual
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III-V Semiconductor Platforms and Devices for Nonlinear Integrated Photonics
用于非线性集成光子学的 III-V 半导体平台和器件
- 批准号:
RGPIN-2020-03989 - 财政年份:2022
- 资助金额:
$ 2.04万 - 项目类别:
Discovery Grants Program - Individual
III-V Semiconductor Platforms and Devices for Nonlinear Integrated Photonics
用于非线性集成光子学的 III-V 半导体平台和器件
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RGPIN-2020-03989 - 财政年份:2021
- 资助金额:
$ 2.04万 - 项目类别:
Discovery Grants Program - Individual
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