Spectroscopic Studies of High Permittivity Materials

高介电常数材料的光谱研究

• 批准号: RGPIN-2017-04785
• 负责人: Crandles, David
• 金额: $ 1.53万
• 依托单位: Brock University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2020
• 资助国家: 加拿大
• 起止时间: 2020-01-01 至 2021-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=711218
• 关键词: Spectroscopic; Studies; Permittivity; Materials; Spectroscopic; Studies; Permittivity; Materials

High Permittivity materials are of great interest because of important existing applications in cell phone networks and potential applications in electrostatic energy storage devices (capacitors). To be of potential use in capacitors, a material will require "giant permittivity" that is temperature independent. To be of potential use in a dielectric resonator, which is a common component in cell phone networks, the energy "loss" must be minimized, while maintaining a reasonably high and temperature-independent permittivity. This research proposal will address fundamental questions regarding both of these applications. Since 2013, giant permittivity has been thought to have been observed in two novel materials: "co-doped oxides" in which the permittivity increase is due to “defect dipoles” and "high entropy oxides" in which the permittivity increase is not understood. Recent tests have suggested that the observation of giant permittivity in co-doped oxides is strongly affected by electrical contacts. The open question as to whether “defect dipoles” can actually increase permittivity will be studied using a contact-free technique in compensated silicon. If this mechanism is demonstrated, it may lead to the development of co-doped higher band gap materials which may be useful in energy storage. We will also perform tests in the high entropy oxides, to see if previous observations of giant permittivity made by measuring capacitance at low frequency are similarly affected by electrical contacts. Turning to dielectric resonator materials, note that the lowest loss material commonly used, the ordered perovskite BaMg1/3Ta2/3O3, is extremely expensive because it incorporates tantalum. Many researchers have proposed using niobium-based materials to replace expensive tantalum. However, the loss mechanisms in the niobium-based materials are poorly understood. For example, while the loss in BaMg1/3Nb2/3O3 has been predicted to be good enough for resonator applications, the losses observed in samples produced up to this point in time have been very large. Funds requested in this proposal will be used to perform a systematic study of dielectric loss in niobium-based dielectric resonator materials using a combination of x-ray diffraction and wide-frequency-range dielectric spectroscopy. The goal is to understand whether chemical composition and processing conditions can be slightly modified to decrease loss. Developing a niobium based material that could compete with tantalum based materials in terms of performance and price would be a significant and useful achievement.

高介电常数材料引起了人们的极大兴趣，因为在手机网络中有重要的现有应用以及静电储能设备（电容器）中的潜在应用。为了在电容器中使用潜在的用途，材料将需要“巨大的介电常数”，即温度无关。为了在饮食谐振器中潜在使用，这是手机网络中常见的组成部分，必须将能量“损失”最小化，同时保持相当高的温度无关介电常数。该研究建议将解决有关这两种应用的基本问题。自2013年以来，人们认为在两种新型材料中观察到了巨大的介电常数：“共掺杂的氧化物”，其中介电性增加是由于“缺陷偶极子”和“高熵氧化物”引起的，其中不了解介电常数的增加。最近的测试表明，共掺杂氧化物中巨大介电常数的观察受到电触点的强烈影响。关于“缺陷偶极子”是否可以实际增加许可的开放问题将使用补偿硅中的无接触技术进行研究。如果证明了这种机制，可能会导致可能有助于储能有用的共掺杂的较高带隙材料的发展。我们还将在高熵氧化物中进行测试，以查看以前对低频测量电容产生的巨型介电常数是否受到电触点的影响。转向营养谐振材料，请注意，通常使用的最低损失材料是钙钛矿BAMG1/3TA2/3O3，非常昂贵，因为它结合了tantalum。许多研究人员提出使用基于尼伯的材料来替代昂贵的坦塔尔。但是，对基于尼伯的材料的损失机制知之甚少。例如，尽管预计BAMG1/3NB2/3O3中的损失对于谐振器应用足够好，但到目前为止产生的样品中观察到的损失非常大。该提案中要求的资金将用于对基于Niobium的饮食谐振材料的饮食损失进行系统研究，结合X射线衍射和宽频率范围的饮食光谱。目的是了解化学成分和加工条件是否可以稍微修改以减少损失。开发一种基于尼物的材料，可以与触觉基于性能的材料竞争性能和价格，这将是一项重大且有用的成就。