Analyse fine en champ proche et optimisation de l'effet piézoélectrique de films minces de nitrure d'aluminium synthétisés par pulvérisation.

分析粉末合成氮铝薄膜的压电效应的精细过程和优化。

• 批准号: 542456-2019
• 负责人: Soltani, Ali
• 金额: $ 1.82万
• 依托单位: Université de Sherbrooke
• 依托单位国家: 加拿大
• 项目类别: Engage Grants Program
• 财政年份: 2019
• 资助国家: 加拿大
• 起止时间: 2019-01-01 至 2020-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=680265
• 关键词: Analyse; fine; en; champ; proche

Aluminum nitride (AlN) is a material with application in a number of technological areas owing to its optical, dielectric and acoustic properties. Particularly, as a piezoelectric material with good dielectric properties, such as low losses, good high frequency characteristics, high velocity coupling coefficient, AlN film has received a great deal of attention for high temperature operating. Many research groups have done a tremendous amount of research on AlN film growth in recent years. They mainly focused on the development of sophisticated film-synthesis techniques, controlling the preferred orientation by change of deposition parameters, and substantial improvement in the understanding of the related materials science.Teledyne Dalsa have shown in some works that in condition to tune the deposition conditions, it is possible to improve significantly the crystalline quality of the films even if one use magnetron sputtering system at low temperature. Nevertheless, it has been observed that the good crystalline quality does not lead systematically to high piezoelectric performances. In the frame of this work, we have tried to address this question thanks to a large panel of local probe technic (AFM, C-AFM, K-PFM) and piezoelectric investigations.

氮化铝（ALN）是一种在许多技术领域中应用的材料，其光学，介电和声学性能。特别是，作为具有良好介电特性的压电材料，例如低损耗，良好的高频特性，高速耦合系数，ALN膜因高温运行而受到了很大的关注。近年来，许多研究小组对Aln电影增长进行了大量研究。他们主要集中于发展复杂的膜合成技术的发展，通过更改沉积参数来控制首选方向，并在对相关材料科学的理解中进行了实质性改善。TeledyneDalsa在某些工作中表明，在调整沉积条件的条件下，可以显着改善膜的质量，即使使用胶片的质量，也可以将摄影量降低。然而，已经观察到，良好的结晶质量不会系统地导致高压电性能。在这项工作的框架中，我们试图通过一大批本地探测技术（AFM，C-AFM，K-PFM）和压电调查来解决这个问题。