Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits
面积高效的低功耗射频和毫米波 CMOS 集成电路
基本信息
- 批准号:RGPIN-2014-06048
- 负责人:
- 金额:$ 2.26万
- 依托单位:
- 依托单位国家:加拿大
- 项目类别:Discovery Grants Program - Individual
- 财政年份:2018
- 资助国家:加拿大
- 起止时间:2018-01-01 至 2019-12-31
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits**In the last two decades, the implementation of radio frequency (RF) building blocks of wireless transceivers along with the rest of systems on a single Complementary Metal Oxide Semiconductor (CMOS) silicon chip has enabled the low-cost integration of several wireless platforms in today's portable electronic devices such as smartphones, tablets, wireless sensors, and many others. However, the RF part of the system typically occupies a significant portion of silicon chip area because of the necessity to use on-chip passive components particularly on-chip spiral inductors. In addition, RF circuits usually consume a significant portion of total chip power. Growing consumer demand for increased functionality at reduced cost and extended battery life necessitates greater research efforts on design and implementation of area-efficient low-power radio frequency and millimeter-wave (MMW) CMOS integrated circuits (ICs) and systems to lower microchip fabrication cost and reduce power consumption. The long-term objective of the proposed research is to develop new device, circuit, and system structures to enable economical CMOS-based solutions for widespread adoption of radio-frequency and mm-wave devices in mainstream consumer electronic products. **To lower the cost of RF and MMW ICs, we plan to develop highly-linear low-noise transistor-based passive components (TBPCs) to replace their area-inefficient passive counterparts in major RF building blocks. These TBPCs such as active inductors emulate the electrical behavior of their passive counterparts only occupying a fraction of the chip area of their passive counterparts. Using the same concept, we plan develop new passive devices such as negative capacitors and inductors for which no passive alternatives exist in order to enhance the performance of RF/MMW circuits and systems. The TBPCs such as negative resistors and capacitors can potentially compensate for the losses and cancel the effect of parasitic capacitors of RF/MMW circuits resulting in gain enhancement, bandwidth extension, and lower power consumption. In order to extend the battery life of portable wireless devices, we plan to work on lowering the power consumption of RF/MMW circuits through development of RF circuits in the moderate inversion region where the ratio of transistor gain to the power consumption is the highest. In addition, fully integrated RF energy harvesting systems will be used to charge the device battery on the go to further extend the battery life of portable electronic devices. Finally, to enable new MMW wireless technologies become commercially available in mainstream electronic products, we aim to design and implement MMW integrated circuits in low-cost CMOS process. **In this project, novel structures of RF/MMW devices, circuits, and systems will be developed for variety of applications including high-data-rate wireless communication, wireless sensors, biomedical imaging, security, and many others. As implemented in CMOS technology, these new devices lower the cost and reduce the size of final product making them economically feasible for mainstream consumers. We expect to create new knowledge in the field as the proposed devices will be developed to outperform the previously reported designs in terms performance, area efficiency, and power efficiency and consumption. This new knowledge can be commercialized by start-up companies or through licensing to established corporations and will be disseminated in respected publications to advance the research in the field. In addition, several graduate students will be trained throughout this project as integrated circuits and systems designers.
在过去的二十年中,无线收发器的射频(RF)构件以及单个互补金属氧化物半导体(CMOS)的单个系统上的其他系统的实现,无线电芯片(CMOS)的其他系统使无线电平台的低调符合当今的Portsorts,在过去的二十年中,无线收发器以及其余的系统在过去的二十年中的实施以及其他系统上的其他系统符合如今的Portsorn of Portports,还有许多其他。但是,系统的RF部分通常占据硅芯片区域的很大一部分,因为有必要使用芯片上的被动组件,尤其是芯片上的螺旋感应器。此外,RF电路通常会消耗总芯片功率的很大一部分。不断增长的消费者需求以降低成本和延长电池寿命增加功能,这需要在设计和实施面积低功率射频和毫米波(MMW)CMOS集成电路(ICS)方面进行更多的研究工作,以降低微芯片制造成本并降低电力消耗。拟议研究的长期目标是开发新的设备,电路和系统结构,以实现基于经济的CMOS解决方案,以广泛采用主流消费者电子产品中的射频和MM波设备。 **为了降低RF和MMW IC的成本,我们计划开发高线性低噪声晶体管的被动组件(TBPC),以替换其在主要RF构件中的区域内无被动对应物。这些TBPC(例如主动电感器)模仿被动对应物的电气行为仅占据其被动对应物芯片面积的一小部分。 使用相同的概念,我们计划开发新的被动设备,例如负电容器和电感器,为了增强RF/MMW电路和系统的性能。负电阻和电容器等TBPC可能会补偿损失,并取消RF/MMW电路的寄生电容器的影响,从而增强增益,带宽扩展和较低的功耗。为了延长便携式无线设备的电池寿命,我们计划通过在中度反转区域开发RF电路来降低RF/MMW电路的功耗,在中度反转区域,晶体管增益与功耗的比率最高。此外,完全集成的RF能源收集系统将用于为设备电池充电,以进一步延长便携式电子设备的电池寿命。最后,为了使新的MMW无线技术在主流电子产品中成为商业上可用的,我们旨在在低成本CMOS流程中设计和实施MMW集成电路。 **在这个项目中,将开发RF/MMW设备,电路和系统的新颖结构,用于各种应用程序,包括高数据速率无线通信,无线传感器,生物医学成像,安全性,安全性等。正如CMOS技术实施的那样,这些新设备降低了成本并降低了最终产品的规模,使其在主流消费者方面经济可行。我们期望在该领域创建新知识,因为将开发提出的设备以优于先前报道的设计,以性能,区域效率以及功率效率和消费术语。这些新知识可以通过初创公司或通过许可向已建立的公司进行商业化,并将在受人尊敬的出版物中传播以推进该领域的研究。此外,将在整个项目中以综合电路和系统设计师的身份对几位研究生进行培训。
项目成果
期刊论文数量(0)
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Moez, Kambiz其他文献
High-Quality-Factor Active Capacitors for Millimeter-Wave Applications
- DOI:
10.1109/tmtt.2012.2221475 - 发表时间:
2012-12-01 - 期刊:
- 影响因子:4.3
- 作者:
Ghadiri, Aliakbar;Moez, Kambiz - 通讯作者:
Moez, Kambiz
A 3.2 V-15 dBm Adaptive Threshold-Voltage Compensated RF Energy Harvester in 130 nm CMOS
- DOI:
10.1109/tcsi.2015.2413153 - 发表时间:
2015-04-01 - 期刊:
- 影响因子:5.1
- 作者:
Hameed, Zohaib;Moez, Kambiz - 通讯作者:
Moez, Kambiz
An RF-to-DC Rectifier With High Efficiency Over Wide Input Power Range for RF Energy Harvesting Applications
- DOI:
10.1109/tcsi.2019.2931485 - 发表时间:
2019-12-01 - 期刊:
- 影响因子:5.1
- 作者:
Saffari, Parvaneh;Basaligheh, Ali;Moez, Kambiz - 通讯作者:
Moez, Kambiz
Systematic Co-Design of Matching Networks and Rectifiers for CMOS Radio Frequency Energy Harvesters
- DOI:
10.1109/tcsi.2019.2902506 - 发表时间:
2019-08-01 - 期刊:
- 影响因子:5.1
- 作者:
Karami, Mohammad Amin;Moez, Kambiz - 通讯作者:
Moez, Kambiz
A Highly-Efficient RF Energy Harvester Using Passively-Produced Adaptive Threshold Voltage Compensation
- DOI:
10.1109/tcsi.2021.3107149 - 发表时间:
2021-11-01 - 期刊:
- 影响因子:5.1
- 作者:
Karami, Mohammad Amin;Moez, Kambiz - 通讯作者:
Moez, Kambiz
Moez, Kambiz的其他文献
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{{ truncateString('Moez, Kambiz', 18)}}的其他基金
Ultra-Low-Power Wireless Transceivers Powered by Radio Frequency Energy Harvesting
由射频能量收集供电的超低功耗无线收发器
- 批准号:
RGPIN-2022-03475 - 财政年份:2022
- 资助金额:
$ 2.26万 - 项目类别:
Discovery Grants Program - Individual
Self-Powered Wireless Electrocardiogram Device
自供电无线心电图仪
- 批准号:
571237-2022 - 财政年份:2021
- 资助金额:
$ 2.26万 - 项目类别:
Idea to Innovation
Development of self-powered wireless sensor nodes for internet of things applications and beyond
开发用于物联网应用及其他领域的自供电无线传感器节点
- 批准号:
568672-2021 - 财政年份:2021
- 资助金额:
$ 2.26万 - 项目类别:
Alliance Grants
Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits
面积高效的低功耗射频和毫米波 CMOS 集成电路
- 批准号:
RGPIN-2014-06048 - 财政年份:2021
- 资助金额:
$ 2.26万 - 项目类别:
Discovery Grants Program - Individual
Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits
面积高效的低功耗射频和毫米波 CMOS 集成电路
- 批准号:
RGPIN-2014-06048 - 财政年份:2020
- 资助金额:
$ 2.26万 - 项目类别:
Discovery Grants Program - Individual
Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits
面积高效的低功耗射频和毫米波 CMOS 集成电路
- 批准号:
RGPIN-2014-06048 - 财政年份:2019
- 资助金额:
$ 2.26万 - 项目类别:
Discovery Grants Program - Individual
GaN MOSFET Power Amplifiers for Resilient Satellite Communications******
用于弹性卫星通信的 GaN MOSFET 功率放大器******
- 批准号:
536523-2018 - 财政年份:2018
- 资助金额:
$ 2.26万 - 项目类别:
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RF-Powered Wireless Pressure Micro-Sensor for Fracking Operation Monitoring
用于监测压裂作业的射频供电无线压力微型传感器
- 批准号:
521995-2017 - 财政年份:2017
- 资助金额:
$ 2.26万 - 项目类别:
Engage Grants Program
Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits
面积高效的低功耗射频和毫米波 CMOS 集成电路
- 批准号:
RGPIN-2014-06048 - 财政年份:2017
- 资助金额:
$ 2.26万 - 项目类别:
Discovery Grants Program - Individual
Area-Efficient Low-Power Radio Frequency and Millimeter Wave CMOS Integrated Circuits
面积高效的低功耗射频和毫米波 CMOS 集成电路
- 批准号:
RGPIN-2014-06048 - 财政年份:2016
- 资助金额:
$ 2.26万 - 项目类别:
Discovery Grants Program - Individual
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