Feasibility of an InP Reflective Semiconductor Optical Amplifier on a Silicon Nitride hybrid integration platform.

氮化硅混合集成平台上 InP 反射半导体光放大器的可行性。

• 批准号: 477622-2014
• 负责人: Dolgaleva, Ksenia
• 金额: $ 1.82万
• 依托单位: University of Ottawa
• 依托单位国家: 加拿大
• 项目类别: Engage Grants Program
• 财政年份: 2014
• 资助国家: 加拿大
• 起止时间: 2014-01-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=565862
• 关键词: Feasibility; InP; Reflective; Semiconductor; Optical

The goal of this Engage project is to establish the feasibility of InGaAsP/InP Quantum Well (QW) Reflective Semiconductor Optical Amplifier (RSOA) configured for a flip chip assembly using a Silicon Nitride (Si3N4) hybrid integration platform and to assess the performance of the RSOA as a gain block for an External Cavity Tuneable Laser (ECTL) over the C-band for the WDM telecommunications market. The study will consider adiabatic couplers exploiting sub-wavelength structures and vertically as well as horizontally thinned tapers for efficient evanescent optical energy transfer between the RSOA and Si3N4 waveguide. An asymmetric multiple quantum well (AMQW) RSOA will be modelled and simulated with the design goal of high gain and high saturation power over a wide-band. All elements will then be assembled in a simulation to determine the

该 Engage 项目的目标是确定使用氮化硅 (Si3N4) 混合集成平台配置用于倒装芯片组装的 InGaAsP/InP 量子阱 (QW) 反射半导体光放大器 (RSOA) 的可行性，并评估其性能RSOA 作为 WDM 电信市场 C 波段外腔可调谐激光器 (ECTL) 的增益模块。该研究将考虑利用亚波长结构以及垂直和水平细化锥体的绝热耦合器，以在 RSOA 和 Si3N4 波导之间实现高效的倏逝光能量传输。将对非对称多量子阱 (AMQW) RSOA 进行建模和仿真，其设计目标是在宽带上实现高增益和高饱和功率。然后将在模拟中组装所有元素以确定