Structure function relationship in electronic thin films

电子薄膜中的结构函数关系

• 批准号: 327159-2009
• 负责人: Jiang, DeTong
• 金额: $ 2.04万
• 依托单位: University of Guelph
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2013
• 资助国家: 加拿大
• 起止时间: 2013-01-01 至 2014-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=526844
• 关键词: Structure; function; relationship; electronic; thin

The proposed research is about the structure-function relationship of two types of thin films: one is made of organic semiconducting molecules and the other is made of metal silicide. The interest in both types of films lies in their functional properties for electronic applications. The metal silicides of our interest are for making electrical connection leads and gate pads in the advanced silicon-based integrated circuits. For device dimensions down to several dozen nanometers, a detail understandings of the film atomic structures is required. The organic thin films are used as active semiconductor layers in field-effect transistor and light emitting transistor applications. The advantages of organic electronics include low fabrication cost, large area and devices on flexible substrates. In these field effect devices the device performance relies on the orderliness of molecules in few molecular layers at the interface between organic semiconductor and gate insulator, a region of few nanometers in thickness. Our research is to characterize the atomic or molecular structures in these nanometer scale regions of interest, and base on the structural understanding to improve the film formation process towards the desired functional properties. Our primary tool for investigating these nanoscale films is X-rays of various wavelength, generated by the synchrotron accelerator at the Canadian Light Source. We also use the Advanced Photon Source in the States, using the pacific northwest consortium facilities participated by Canadian institutions. Experimentally we use a combined approach including X-ray absorption spectroscopy (extended X-ray absorption fine structure and near edge X-ray absorption fine structure), grazing-incidence X-diffraction and X-ray scattering techniques to probe the nanoscale structures. The metal silicide films are formed by solid state reactions by our collaborators. The organic semiconductor films are fabricated in our laboratories at Guelph using vacuum vapor deposition techniques, assisted with atomic force microscope imaging techniques to ensure the morphological integrity of the samples and photoelectron spectroscopy techniques for their chemical composition integrity.

该研究涉及两种薄膜的结构-功能关系：一种由有机半导体分子制成，另一种由金属硅化物制成。对两种类型薄膜的兴趣在于它们在电子应用中的功能特性。我们感兴趣的金属硅化物用于制造先进硅基集成电路中的电连接引线和栅极焊盘。对于小至几十纳米的器件尺寸，需要详细了解薄膜原子结构。有机薄膜在场效应晶体管和发光晶体管应用中用作有源半导体层。有机电子器件的优点包括制造成本低、面积大以及柔性基板上的器件。在这些场效应器件中，器件性能依赖于有机半导体和栅极绝缘体之间界面（厚度为几纳米的区域）的几个分子层中分子的有序性。我们的研究是表征这些纳米级感兴趣区域中的原子或分子结构，并基于结构理解来改进成膜过程以获得所需的功能特性。我们研究这些纳米级薄膜的主要工具是由加拿大光源的同步加速器产生的各种波长的 X 射线。我们还在美国使用先进光子源，使用加拿大机构参与的太平洋西北联合体设施。实验上，我们使用包括X射线吸收光谱（扩展X射线吸收精细结构和近边缘X射线吸收精细结构）、掠入射X衍射和X射线散射技术在内的组合方法来探测纳米级结构。金属硅化物薄膜是由我们的合作者通过固态反应形成的。有机半导体薄膜是在我们位于圭尔夫的实验室中使用真空气相沉积技术制造的，并辅以原子力显微镜成像技术以确保样品的形态完整性以及光电子能谱技术以确保其化学成分的完整性。