A molecular-level investigation of the hot-wire chemical vapor deposition chemistry of si-containing thin films

含硅薄膜热线化学气相沉积化学的分子水平研究

• 批准号: 283270-2009
• 负责人: Shi, Yujun
• 金额: $ 3.64万
• 依托单位: University of Calgary
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2012
• 资助国家: 加拿大
• 起止时间: 2012-01-01 至 2013-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=514676
• 关键词: molecular; level; investigation; hot; wire

Hot-wire chemical vapor deposition (HWCVD) is one of the most promising techniques for producing device-quality silicon-containing thin films needed for a wide variety of applications in solar cells, semiconductor industry and biotechnology. The proposed research program aims at providing a molecular-level understanding of the fundamental chemistry and physics in HWCVD of silicon carbide and silicon nitride alloy materials, and applying the knowledge for an optimization of film formation processes. We will use two laser-based ionization methods, i.e., vacuum ultraviolet (VUV) single-photon ionization (SPI) and laser induced electron impact ionization (LIEI), coupled with time-of-flight (TOF) mass spectrometry (MS) to identify the nature of the gas-phase film growth precursors and to determine the chemical kinetics that govern their formation. Laser spectroscopic techniques, including resonance-enhanced multiphoton ionization (REMPI) and zero kinetic energy (ZEKE) photoelectron/mass analyzed threshold ionization (MATI), will be used to characterize the structure, bonding and energetic properties of gaseous silicon carbide (SixCy) and silicon nitride (SinNm) clusters. This will help develop highly sensitive and selective diagnostic method for these reactive species and contribute to the understanding of growth mechanisms since these gaseous clusters can be viewed as prototypes for the interactions of carbon and nitrogen atoms with silicon sites at surfaces. We will also characterize the structural and compositional changes of the silicon carbide and silicon nitride thin films prepared using different source gases and various deposition parameters. The results will be correlated with those from our studies of gas-phase chemistry using laser ionization mass spectrometric and spectroscopic techniques for a complete picture of the growth processes, both in the gas-phase and on the substrate surfaces. The proposed research will provide importance guidance towards an efficient and rational optimization of film formation in HWCVD to obtain superior quality silicon-conatining thin films for industrial applications.

热线化学蒸气沉积（HWCVD）是在太阳能电池，半导体行业和生物技术中生产各种应用所需的含硅含量薄膜的最有希望的技术之一。拟议的研究计划旨在提供分子级的理解，对碳化硅和氮化硅合金材料的HWCVD中的基本化学和物理学，并应用知识以优化膜形成过程。我们将使用两种基于激光的电离方法，即真空紫外线（VUV）单光子离子化（SPI）和激光诱导的电子冲击电离（LIEI），并与飞行时间（TOF）质谱（MS）相结合，以确定对气体膜增长的性质，以确定化学剂的性质，并确定化学kintics的性质。激光光谱技术（包括共振增强的多光子离子化（REMPI）和零动能（Zeke）光电/质量分析的阈值电离（MATI）将用于表征结构，键合和能量的粘合碳碳碳和能量的特性（六）和硅质（SILIC）和硅片（sinic）sinricnridride（sinric nrride）。这将有助于为这些反应性物种开发高度敏感和选择性的诊断方法，并有助于对生长机制的理解，因为这些气态簇可以看作是碳和氮原子与表面上硅位点相互作用的原型。我们还将表征使用不同源气体和各种沉积参数制备的碳化硅和氮化硅薄膜的结构和组成变化。结果将与我们使用激光电离质谱和光谱技术的气相化学研究中的结果相关，以完整地了解生长过程，包括气相和底物表面。拟议的研究将为HWCVD中膜形成的有效和合理优化提供重要的指导，以获得用于工业应用的优质硅薄膜。