Understanding, characterizing and controlling semiconductor defects

了解、表征和控制半导体缺陷

• 批准号: 311687-2010
• 负责人: Mooney, Patricia
• 金额: $ 3.79万
• 依托单位: Simon Fraser University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2010
• 资助国家: 加拿大
• 起止时间: 2010-01-01 至 2011-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=457098
• 关键词: Understanding; characterizing; controlling; semiconductor; defects

The properties of semiconductors are determined by the presence of impurities and defects. Defects control carrier concentration, mobility, lifetime, and recombination and are also responsible for processes involving atomic transport such as migration, diffusion, and precipitation of impurities and host atoms. The control of defects and impurities is the critical factor that enables a semiconductor to be engineered for applications in computing and telecommunications or for the more efficient use of energy. Our research program focuses primarily on studies of defects in emerging new semiconductors and on semiconductor materials and nanoscale structures where defects are known to limit the advancement of semiconductor technologies. This research on understanding and controlling semiconductor defects contributes to improved semiconductor devices for applications in computing, communications and the efficient use of energy.

半导体的特性是由杂质和缺陷的存在决定的。缺陷控制载流子浓度、迁移率、寿命和复合，并且还负责涉及原子传输的过程，例如杂质和主体原子的迁移、扩散和沉淀。缺陷和杂质的控制是使半导体能够设计用于计算和电信应用或更有效地利用能源的关键因素。我们的研究计划主要侧重于研究新兴半导体中的缺陷以及已知缺陷会限制半导体技术进步的半导体材料和纳米级结构。这项关于理解和控制半导体缺陷的研究有助于改进半导体器件，用于计算、通信和能源的有效利用。