Fabrication and analyses of intermixing in InGaAs/InGaAsP and InGaAsP/InP quantum welld and their use in intermixed quantum-well lasers and integrated laser-modulator structures

InGaAs/InGaAsP 和 InGaAsP/InP 量子阱混合的制造和分析及其在混合量子阱激光器和集成激光调制器结构中的应用

• 批准号: 42570-2007
• 负责人: Simmons, John
• 金额: $ 1.98万
• 依托单位: McMaster University
• 依托单位国家: 加拿大
• 项目类别: Discovery Grants Program - Individual
• 财政年份: 2008
• 资助国家: 加拿大
• 起止时间: 2008-01-01 至 2009-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=390491
• 关键词: Fabrication; analyses; intermixing; InGaAs; InGaAsP

Quantum-well intermixing relies on the creation of non-equilibrium concentrations of point defects that diffuse through the quantum wells and adjacent barrier layers during thermal-anneal treatment, causing changes in the quantum-well dimensions and composition. At present there are few direct compositional studies that look into redistribution of material inside quantum- well structures due to intermixing. It is proposed to use analytical electron microscopy to determine the compositional and morphological changes induced by quantum well intermixing in order to fabricate InP and GaAs-based quantum-well structures with spatial wavelength characteristics. The ability to observe temperature-dependent changes in the compositional profiles will permit the direct measurement of the diffusion of elements due to quantum-well intermixing and to determine the activation energies of the process. The effective diffusion coefficients obtained from the concentration profiles of annealed samples will lead to better understanding of the particular diffusion mechanism for each particular system (i.e. the substitutional-interstitial and the vacancy mechanisms under intrinsic point defect equilibrium and non-equilibrium conditions). Results will be compared with theoretical calculations based on photoluminescent- wavelength shift and, therefore, will significantly improve our knowledge of the diffusion and interdiffusion mechanisms that take place in semiconductor materials.

量子阱混合依赖于点缺陷的非平衡浓度的产生，这些点缺陷在热退火处理期间扩散通过量子阱和相邻势垒层，导致量子阱尺寸和成分的变化。目前，很少有直接的成分研究来研究量子阱结构内由于混合而导致的材料重新分布。建议使用分析电子显微镜来确定量子阱混合引起的成分和形态变化，以制造具有空间波长特性的 InP 和 GaAs 基量子阱结构。观察成分分布随温度变化的能力将允许直接测量由于量子阱混合而导致的元素扩散，并确定该过程的活化能。从退火样品的浓度分布中获得的有效扩散系数将有助于更好地理解每个特定系统的特定扩散机制（即本征点缺陷平衡和非平衡条件下的替代间隙和空位机制）。结果将与基于光致发光波长偏移的理论计算进行比较，因此将显着提高我们对半导体材料中发生的扩散和相互扩散机制的了解。