Development of an epitaxial lift-off technique for II-VI semiconductor heterostructures

II-VI族半导体异质结构外延剥离技术的开发

基本信息

批准号：
EP/E02209X/1
负责人：
Kevin Prior
金额：
$ 12.95万
依托单位：
Heriot-Watt University
依托单位国家：
英国
项目类别：
Research Grant
财政年份：
2006
资助国家：
英国
起止时间：
2006 至无数据
项目状态：
已结题

来源：
https://gtr.ukri.org/projects?ref=EP%2FE02209X%2F1
关键词：
Development epitaxial lift off technique

项目摘要

II-VI semiconductors have many properties which are different from their III-V counterparts. One important property is the exciton binding energy which is much larger in II-VI compounds such as ZnSe and CdSe and can be increased still further by suitable confinement. This means that in ZnSe and CdSe excitons can be studied at room temperature or at high densities where complexes such as biexcitons can be observed. However, to study these phenomena in wide bandgap II-VI compounds requires an even wider bandgap barrier material. MgS is such a material and can be grown with low strain on GaAs in combination with ZnSe and CdSe. MgS is not an easy material to produce. The growth of this material was pioneered at Heriot-Watt and currently, we are one of only three labs worldwide where such MgS containing structures can be grown.We recently found that MgS has one other useful advantage, which is that weak acid can be used to dissolve it, separating the structure grown on top of it from the unwanted substrate underneath. This technique, called epitaxial lift-off, is a very powerful method of generating layers which can then be studied or subject to further processing. For example, the layers can easily be incorporated into optical cavities or placed on to a substrate with completely different physical properties.Unfortunately, this technique means that we can not use MgS as a barrier layer in the same structure. Recently, we have recently found that adding a small amount of zinc to MgS creates an alloy which has good confinement and resists the acid etching solution. This alloy has a large strain to GaAs, but it suggests that there are other related low strain alloys which would be entirely compatible with the structures we currently grow.In this study we aim to find the most suitable wide bandgap alloy composition which we can use which resists our etching solution. We will then demonstrate its use in semiconductor structures in combination with MgS, where the MgS allows us to perform epitaxial lift-off and the new alloy resists the etching and gives the confinement.

II-VI半导体具有许多与III-V对应物不同的特性。一个重要的特性是激子结合能，它在II-VI化合物（例如ZnSE和CDSE）中大得多，并且可以通过合适的限制进一步增加。这意味着可以在室温或高密度下研究诸如biexcitons之类的高密度下研究。但是，要在宽带II-VI化合物中研究这些现象需要更广泛的带隙屏障材料。 MGS是一种材料，可以在GAAS上与ZnSE和CDSE结合使用低应变。 MGS不是很容易生产的材料。这种材料的生长是在Heriot-watt开创的，目前，我们是全球仅有的三个实验室之一，可以种植含有结构的MG。我们最近发现，MGS具有另一个有用的优势，即可以使用弱酸将其溶解，将其在其上面生长的结构与下面的不受欢迎的底物分开。这种称为外延升降的技术是一种非常有力的生成层的方法，然后可以研究或进行进一步的处理。例如，这些层可以轻松地掺入光腔中或将其放置在具有完全不同物理特性的基材上。不幸的是，该技术意味着我们不能将MGS用作相同结构中的屏障层。最近，我们最近发现，在MGS中添加少量锌会产生一种合金，具有良好的限制并抗性酸蚀刻溶液。该合金对GAAS有很大的菌株，但它表明还有其他相关的低应变合金与我们当前生长的结构完全兼容。在这项研究中，我们旨在找到最合适的宽带隙合金组成，我们可以使用它们可以抵抗我们的蚀刻溶液。然后，我们将证明其在半导体结构中的用途与MGS结合使用，在该结构中，MGS允许我们执行外延升降，而新的合金则抵抗了蚀刻并给予限制。