Punching holes in GaAs: a novel route to making artificial graphene and topological insulators

在砷化镓上打孔：制造人造石墨烯和拓扑绝缘体的新途径

• 批准号: DE140100775
• 负责人: Dr Oleh Klochan
• 金额: $ 27.56万
• 依托单位: The University of New South Wales
• 依托单位国家: 澳大利亚
• 项目类别: Discovery Early Career Researcher Award
• 财政年份: 2014
• 资助国家: 澳大利亚
• 起止时间: 2014-01-01 至 2017-12-31
• 项目状态: 已结题
• 来源: https://dataportal.arc.gov.au/RGS/Web/Grants/DE140100775
• 关键词: Punching; holes; GaAs; novel; route

In the past seven years there has been an explosion of interest in materials such as graphene and topological insulators due to their unique electronic properties, culminating in the award of the 2010 Nobel Prize in Physics. However these materials face significant challenges that limit how we can manipulate them and use them in industry. This project will overcome these challenges by developing artificial graphene and topological insulators made using existing nanofabrication techniques on conventional semiconductors already used by industry. This will make it possible to study the unique electronic properties of these materials with unprecedented control, with the ultimate aim of using artificially designed electronic materials in industry.

在过去的七年里，人们对石墨烯和拓扑绝缘体等材料因其独特的电子特性而产生了浓厚的兴趣，并最终获得了 2010 年诺贝尔物理学奖。然而，这些材料面临着重大挑战，限制了我们如何操纵它们并在工业中使用它们。该项目将通过开发人造石墨烯和拓扑绝缘体来克服这些挑战，这些人造石墨烯和拓扑绝缘体是利用现有的纳米加工技术在工业已使用的传统半导体上制成的。这将使通过前所未有的控制来研究这些材料的独特电子特性成为可能，最终目标是在工业中使用人工设计的电子材料。