Photonics @ Interface: Heterogeneous Integrations for Generation, Detection, Conversion, and Modulation

光子学@接口：用于生成、检测、转换和调制的异构集成

• 批准号: EP/S034242/1
• 负责人: Martin Charlton
• 金额: $ 145.68万
• 依托单位: University of Southampton
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FS034242%2F1
• 关键词: Photonics; Interface; Heterogeneous; Integrations; Generation

We will develop novel photonic devices by bonding two different semiconductor substrates with different spacing between atoms. It was very difficult to ensure an excellent quality at the interface, because the atoms cannot connect perfectly, if the lattice spacing is different. We will overcome this problem by making nano-scale tiny trenches to allow atoms to expand for releasing the strain accumulated at the interface. The quality of the interface is very important to make sure to reduce defects in the atomic scale. We will use the interface for making a highly sensitive detector to identify even just single photon (quantum of light), which is impossible to realise with defects due to the noise from additional carriers created by defects. This detector will be useful for future quantum technologies to enable secure communications and powerful commutations. We will also develop a novel laser and high speed optical switches by using this interface.Our project is summarised as follows:1. Novel Manufacturing Technologies for Enabling Heterogeneous Integrations: We will develop new wafer-scale bonding process technologies to allow excellent interface qualities without defects. Our challenges to overcome the difference of lattice constants and thermal expansion constants for bonded materials. We will accumulate comprehensive knowledge for new bonding techniques. 2. Si/Ge Avalanche-Photo-Diodes and Si/Ge Lasers: The strain engineered interface will enable us to reduce dark currents of Si/Ge Avalanche-Photo-Diodes (APDs) to the level useful for detecting single photons at room temperature. Si/Ge APDs are also useful for LiDAR (Laser Imaging Detection and Ranging). The improved interface quality also enables to achieve lasing of Ge on a Si substrate towards monolithic integrations.3. Si/LiNbO3 Hybrid Optical Modulator and Second-Harmonic-Generators: We will also bond LiNbO3 on a Si substrate, which allows us to utilise the electro-optic and nonlinear effects of LiNbO3, while keeping the advantages of nanoscale patterning of Si. The hybrid optical modulator with a slot waveguide will be operated at attojoule power consumption by removing the 50 Ohm-termination. The hybrid Second-Harmonic-Generators (SHGs) will convert various wavelengths to generate green and UV lights for much denser data-writing on DVDs.We think our approach will establish a new way of making heterogeneous interface with improved quality. Wafer-scale bonding of a patterned substrate is certainly well-known, but the nano-scale patterning to form perfect bonding in atomic-scale has not yet been achieved, yet. We will accumulate comprehensive knowledge on the developed interface, in terms of various physical parameters such as strains, voids, adhesions, and defects for researchers in nanoelectronics and photonics.

我们将通过粘合两个不同原子间距的不同半导体衬底来开发新型光子器件。确保界面处的优良质量非常困难，因为如果晶格间距不同，原子就无法完美连接。我们将通过制作纳米级的微小沟槽来克服这个问题，使原子能够膨胀以释放界面处积累的应变。界面的质量对于确保减少原子尺度的缺陷非常重要。我们将使用该接口来制造高灵敏度探测器，甚至可以识别单个光子（光量子），这在缺陷情况下是不可能实现的，因为缺陷产生的额外载流子会产生噪声。该探测器对于未来的量子技术将非常有用，以实现安全通信和强大的换向。我们还将利用该接口开发新型激光器和高速光开关。我们的项目概述如下： 1．支持异构集成的新型制造技术：我们将开发新的晶圆级键合工艺技术，以实现无缺陷的优异界面质量。我们面临的挑战是克服粘合材料的晶格常数和热膨胀常数的差异。我们将为新的粘合技术积累全面的知识。 2. Si/Ge 雪崩光电二极管和 Si/Ge 激光器：应变工程接口将使我们能够将 Si/Ge 雪崩光电二极管 (APD) 的暗电流降低到可在室温下检测单光子的水平。 Si/Ge APD 对于 LiDAR（激光成像检测和测距）也很有用。改进的界面质量还能够实现 Si 衬底上的 Ge 激光发射，实现单片集成。3． Si/LiNbO3 混合光调制器和二次谐波发生器：我们还将把 LiNbO3 键合到 Si 基板上，这使我们能够利用 LiNbO3 的电光和非线性效应，同时保留 Si 纳米级图案化的优势。通过去除 50 欧姆终端，具有缝隙波导的混合光调制器将以阿焦耳功耗运行。混合二次谐波发生器 (SHG) 将转换各种波长以生成绿光和紫外光，以便在 DVD 上进行更密集的数据写入。我们认为我们的方法将建立一种制造质量更高的异构接口的新方法。图案化基板的晶圆级键合当然是众所周知的，但在原子级形成完美键合的纳米级图案化尚未实现。我们将为纳米电子学和光子学的研究人员积累有关所开发的界面的全面知识，包括应变、空隙、粘附和缺陷等各种物理参数。

项目成果

10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

• DOI: 10.3389/fphy.2021.659585
• 发表时间: 2021-05
• 期刊: Palaeogeography, Palaeoclimatology, Palaeoecology
• 作者: J. Byers;K. Debnath;H. Arimoto;M. Husain;M. Sotto;J. Hillier;K. Kiang;D. Thomson;G. Reed;M. Charlton;S. Saito

Novel Si Photonic Waveguides and Applications to Optical Modulators

新型硅光子波导及其在光调制器中的应用

• DOI: 10.23919/moc46630.2019.8982871
• 发表时间: 2019
• 作者: Saito S

Si photonic waveguides with broken symmetries: applications from modulators to quantum simulations

• DOI: 10.35848/1347-4065/ab85ad
• 发表时间: 2020-08-01
• 期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
• 影响因子: 1.5
• 作者: Saito, Shinichi;Tomita, Isao;Rutt, Harvey N.
• 通讯作者: Rutt, Harvey N.