Photonics @ Interface: Heterogeneous Integrations for Generation, Detection, Conversion, and Modulation

光子学@接口：用于生成、检测、转换和调制的异构集成

• 批准号: EP/S034242/1
• 负责人: Martin Charlton
• 金额: $ 145.68万
• 依托单位: University of Southampton
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2019
• 资助国家: 英国
• 起止时间: 2019 至 无数据
• 项目状态: 未结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FS034242%2F1
• 关键词: Photonics; Interface; Heterogeneous; Integrations; Generation

We will develop novel photonic devices by bonding two different semiconductor substrates with different spacing between atoms. It was very difficult to ensure an excellent quality at the interface, because the atoms cannot connect perfectly, if the lattice spacing is different. We will overcome this problem by making nano-scale tiny trenches to allow atoms to expand for releasing the strain accumulated at the interface. The quality of the interface is very important to make sure to reduce defects in the atomic scale. We will use the interface for making a highly sensitive detector to identify even just single photon (quantum of light), which is impossible to realise with defects due to the noise from additional carriers created by defects. This detector will be useful for future quantum technologies to enable secure communications and powerful commutations. We will also develop a novel laser and high speed optical switches by using this interface.Our project is summarised as follows:1. Novel Manufacturing Technologies for Enabling Heterogeneous Integrations: We will develop new wafer-scale bonding process technologies to allow excellent interface qualities without defects. Our challenges to overcome the difference of lattice constants and thermal expansion constants for bonded materials. We will accumulate comprehensive knowledge for new bonding techniques. 2. Si/Ge Avalanche-Photo-Diodes and Si/Ge Lasers: The strain engineered interface will enable us to reduce dark currents of Si/Ge Avalanche-Photo-Diodes (APDs) to the level useful for detecting single photons at room temperature. Si/Ge APDs are also useful for LiDAR (Laser Imaging Detection and Ranging). The improved interface quality also enables to achieve lasing of Ge on a Si substrate towards monolithic integrations.3. Si/LiNbO3 Hybrid Optical Modulator and Second-Harmonic-Generators: We will also bond LiNbO3 on a Si substrate, which allows us to utilise the electro-optic and nonlinear effects of LiNbO3, while keeping the advantages of nanoscale patterning of Si. The hybrid optical modulator with a slot waveguide will be operated at attojoule power consumption by removing the 50 Ohm-termination. The hybrid Second-Harmonic-Generators (SHGs) will convert various wavelengths to generate green and UV lights for much denser data-writing on DVDs.We think our approach will establish a new way of making heterogeneous interface with improved quality. Wafer-scale bonding of a patterned substrate is certainly well-known, but the nano-scale patterning to form perfect bonding in atomic-scale has not yet been achieved, yet. We will accumulate comprehensive knowledge on the developed interface, in terms of various physical parameters such as strains, voids, adhesions, and defects for researchers in nanoelectronics and photonics.

我们将通过将两个不同的半导体底物与原子之间的间距不同的键结合来开发新的光子设备。很难确保界面上的质量出色，因为如果晶格间距不同，原子不能完美连接。我们将通过制作纳米级微小的沟渠来克服这个问题，以允许原子扩展以释放界面上积累的应变。界面的质量对于确保减少原子量表的缺陷非常重要。我们将使用该界面制作一个高度敏感的检测器，即使仅识别单个光子（量子的量子），这是由于缺陷产生的其他载体产生的其他载体的噪声而无法实现的。该检测器将对未来的量子技术有用，以实现安全的通信和强大的通勤。我们还将通过使用此接口开发一种新颖的激光和高速光学开关。您的项目总结如下：1。实现异质整合的新型制造技术：我们将开发新的晶圆尺度粘结工艺技术，以允许出色的界面质量而没有缺陷。我们要克服键合材料的晶格常数和热扩展常数的差异。我们将积累新的键合技术的全面知识。 2。SI/GE Avalanche-Photo-Diodes和Si/GE激光器：应变工程界面将使我们能够将Si/Ge Avalanche-Photo-Diodes（APDS）的深色降低到可用于在室温下检测单个光子的水平​​。 Si/ge APD也可用于LIDAR（激光成像检测和范围）。改进的界面质量还可以使GE在SI基板上实现对整体整合的激光。3。 Si/Linbo3混合光学调制器和第二谐波产生器：我们还将在SI基板上键入Linbo3，这使我们能够利用Linbo3的电磁和非线性效应，同时保持SI的纳米级图案的优势。带有插槽波导的混合光学调制器将通过删除50欧姆终端来在AttoJoule功率消耗下运行。混合动力第二谐波生成器（SHGS）将转换各种波长，以生成绿色和紫外线灯，以在DVD上进行大量数据编写。我们认为我们的方法将建立一种新的方法，以使异质界面具有改善的质量。鉴于图案的底物的晶状体尺度键合肯定是众所周知的，但是尚未实现在原子级形成完美粘合的纳米尺度图案。我们将根据各种物理参数（例如纳米电子和光子学研究人员的菌株，空隙，粘连和缺陷）来积累有关开发界面的全面知识。

项目成果

10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides

• DOI: 10.3389/fphy.2021.659585
• 发表时间: 2021-05
• 期刊: Palaeogeography, Palaeoclimatology, Palaeoecology
• 作者: J. Byers;K. Debnath;H. Arimoto;M. Husain;M. Sotto;J. Hillier;K. Kiang;D. Thomson;G. Reed;M. Charlton;S. Saito

Novel Si Photonic Waveguides and Applications to Optical Modulators

新型硅光子波导及其在光调制器中的应用

• DOI: 10.23919/moc46630.2019.8982871
• 发表时间: 2019
• 作者: Saito S

Si photonic waveguides with broken symmetries: applications from modulators to quantum simulations

• DOI: 10.35848/1347-4065/ab85ad
• 发表时间: 2020-08-01
• 期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
• 影响因子: 1.5
• 作者: Saito, Shinichi;Tomita, Isao;Rutt, Harvey N.
• 通讯作者: Rutt, Harvey N.