High performance III-V quantum dot photodetectors for low SWaP infrared devices

适用于低 SWaP 红外设备的高性能 III-V 量子点光电探测器

• 批准号: EP/R006172/1
• 负责人: Jiang Wu
• 金额: $ 12.76万
• 依托单位: University College London
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2017
• 资助国家: 英国
• 起止时间: 2017 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FR006172%2F1
• 关键词: performance; III; quantum; dot; photodetectors

Infrared radiation covers a wide electromagnetic spectrum from 0.78 to 1000 um. According to Planck's law, all objects radiate a large portion of infrared radiation at reasonable temperatures, e.g. <6000 K (the surface temperature of the Sun). As a result, infrared photonic systems can be applied to many fields, such as free-space communication, remote sensing, surveillance, spectroscopy, and hazard detection. Many of these applications require both high performance and high operating temperature. The focus of this project is on achieving high performance III-V quantum dot infrared photodetectors for low size, weight, and power (SWaP) devices. High operating temperature (HOT) III-V photodetectors with high quantum efficiency are technically important because the use of mature III-V semiconductors can significantly reduce the fabrication and material cost. More importantly, HOT photodetectors reduce the cooling requirements so that infrared systems can be low SWaP. Despite tremendous progress made in the last two decades, the demand for SWaP infrared photodetectors (particularly for wavelengths >2 micron) becomes increasingly urgent and yet to be met due to intrinsic drawbacks of existing technologies. This work proposes to exploit III-V quantum dot infrared photodetectors for high performance HOT photodetectors. By utilizing new designs and quantum structures, it is possible to improve the quantum efficiency and reduce the dark current, which provide a means of approaching the fundamental detectivity limit. Given that quantum dots are insensitive to defects, the potential of combining silicon electronics and III-V infrared sensing technology also provide a unique opportunity towards mid-infrared Si photonics for sensing and free-space communication, which leverages the near-infrared Si photonics developed for optical integrated circuits and data communication.

红外辐射覆盖了0.78至1000 UM的宽电磁光谱。根据普朗克定律，所有物体在合理温度下辐射大部分红外辐射，例如<6000 K（太阳的表面温度）。结果，红外光子系统可以应用于许多领域，例如自由空间通信，遥感，监视，光谱和危害检测。这些应用中的许多都需要高性能和高工作温度。该项目的重点是实现高尺寸，重量和功率（交换）设备的高性能III-V量子点红外光电探测器。高量子效率的高工作温度（热）III-V光电探测器在技术上很重要，因为使用成熟的III-V半导体可以显着降低制造和材料成本。更重要的是，热光电视降低了冷却要求，以便红外系统可以降低交换。尽管在过去的二十年中取得了巨大进展，但对掉期红外光电探测器的需求（尤其是对于波长> 2微米）变得越来越紧迫，由于现有技术的固有缺陷而尚未满足。这项工作提议利用IIII-V量子点红外光电探测器为高性能热光探测器。通过利用新的设计和量子结构，可以提高量子效率并降低暗流，这提供了一种接近基本检测限制的方法。鉴于量子点对缺陷不敏感，因此将硅电子和III-V红外传感技术组合的潜力也为中红外Si Photonics提供了独特的机会，用于传感和自由空间通信，这利用了近红外SI光子照射，开发了用于光学集成电路和数据通信的近红外SI光子。

项目成果

Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector

• DOI: 10.1016/j.infrared.2019.06.011
• 发表时间: 2019-09-01
• 期刊: INFRARED PHYSICS & TECHNOLOGY
• 影响因子: 3.3
• 作者: Deng, Zhuo;Guo, Daqian;Chen, Baile
• 通讯作者: Chen, Baile

Sub-monolayer quantum dot quantum cascade mid-infrared photodetector

• DOI: 10.1063/1.5011239
• 发表时间: 2017-12-18
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Huang, Jian;Guo, Daqian;Chen, Baile
• 通讯作者: Chen, Baile

Demonstration of InAs/InGaAs/GaAs Quantum Dots-in-a-Well Mid-Wave Infrared Photodetectors Grown on Silicon Substrate

• DOI: 10.1109/jlt.2018.2811388
• 发表时间: 2018-07-01
• 期刊: JOURNAL OF LIGHTWAVE TECHNOLOGY
• 影响因子: 4.7
• 作者: Chen, Wei;Deng, Zhuo;Chen, Baile
• 通讯作者: Chen, Baile

Mid-wave InAs/GaSb Superlattice PiBN Infrared Photodetector Grown on GaAs Substrate

GaAs 衬底上生长的中波 InAs/GaSb 超晶格 PiBN 红外光电探测器

• DOI: 10.1109/acp.2018.8595800
• 发表时间: 2018
• 作者: Huang J

Optical properties of beryllium-doped GaSb epilayers grown on GaAs substrate

• DOI: 10.1016/j.infrared.2018.03.004
• 发表时间: 2018-05
• 期刊: Infrared Physics & Technology
• 影响因子: 3.3
• 作者: Zhuo Deng;Baile Chen;Xiren Chen;J. Shao;Q. Gong;Huiyun Liu;Jiang Wu