Active Sensor Structures for Extreme Environments

适用于极端环境的有源传感器结构

• 批准号: EP/I037660/1
• 负责人: Alton Horsfall
• 金额: $ 60.51万
• 依托单位: Newcastle University
• 依托单位国家: 英国
• 项目类别: Research Grant
• 财政年份: 2011
• 资助国家: 英国
• 起止时间: 2011 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=EP%2FI037660%2F1
• 关键词: Active; Sensor; Structures; Extreme; Environments

Gas sensors that can operate under extreme conditions are an essential underpinning technology in the battle against climate change, the future deployment of nuclear technology and a whole raft of scientific applications. This project will develop the technology required to realise these sensors and demonstrate their applicability in representative hostile environments. The deliverables will directly benefit UK society by allowing the cost-effective measurement of gas concentrations in locations which are inaccessible using current technology; such as nuclear installations, extra terrestrial planets, active volcanoes and exhaust gases in automotive or aerospace applications. By developing devices fabricated using silicon carbide technology, we intend to demonstrate gas sensing arrays, which will offer the ability to discriminate between the components of a mixture of gases and can operate under extreme conditions (for example in temperatures beyond 600C and high radiation flux). These sensor arrays will also be combined with monolithically fabricated amplifier structures to increase the signal to noise ratio and hence allow the detection of lower concentrations. Such technology will allow closed loop control for the first time of many industrial and utility technologies - increasing efficiency and safety.

可在极端条件下运行的气体传感器是应对气候变化、核技术未来部署和一系列科学应用的重要基础技术。该项目将开发实现这些传感器所需的技术，并展示它们在代表性恶劣环境中的适用性。这些成果将允许对使用现有技术无法到达的地点进行具有成本效益的气体浓度测量，从而直接造福英国社会；例如核设施、地外行星、活火山以及汽车或航空航天应用中的废气。通过开发使用碳化硅技术制造的设备，我们打算展示气体传感阵列，该阵列将能够区分气体混合物的成分，并且可以在极端条件下运行（例如在超过 600°C 的温度和高辐射通量） 。这些传感器阵列还将与单片制造的放大器结构相结合，以提高信噪比，从而允许检测较低浓度。此类技术将首次实现许多工业和公用事业技术的闭环控制，从而提高效率和安全性。

项目成果

Characterisation of Interfaces in 4H-SiC high-K MOS Structures

4H-SiC 高 K MOS 结构中的界面表征

• 作者: Roy; S.K.
• 通讯作者: S.K.

4H-SiC VJFETs with Self-Aligned Contacts

具有自对准触点的 4H-SiC VJFET

• DOI: http://dx.10.4028/www.scientific.net/msf.821-823.793
• 发表时间: 2015
• 期刊: Materials Science Forum
• 作者: Zekentes K

Properties and process compatibility of heavily nitrogen implanted silicon carbide devices

重氮注入碳化硅器件的性能和工艺兼容性

• 期刊: Journal of Applied Physics
• 影响因子: 3.2
• 作者: Vassilevski; K.V.
• 通讯作者: K.V.

CMOS compatible gas sensor arrays for hostile environments

适用于恶劣环境的 CMOS 兼容气体传感器阵列

• 发表时间: 2012
• 作者: Furnival; B.J.D.
• 通讯作者: B.J.D.

Discriminating high-K dielectric gas sensors

辨别高 K 介电气体传感器

• 发表时间: 2014
• 作者: Roy; S.K.
• 通讯作者: S.K.