Preparation of Super-Hard Nitride Thin Films for Next Generation by High Density Plasma PVD

高密度等离子体 PVD 制备下一代超硬氮化物薄膜

基本信息

批准号：
09480091
负责人：
MIYAKE Shoji
金额：
$ 3.26万
依托单位：
Osaka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1997
资助国家：
日本
起止时间：
1997 至 1999
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09480091/
关键词：
high density plasma PVD super-hard material thin film helicon wave carbon nitride film 薄膜合成真空アークカーボン薄膜ヘリコン波励起プラズマ真空アークプラズマ

项目摘要

Research on the formation of β-C_3N_4 thin films as one of the most attractive super-hard nitride materials in the next generation has been conducted between 1997 and 1999. The first goal was settled to obtain films with stoichiometric composition for the first by developing a high density helicon-wave excited plasma sputtering source operated at low pressures, in which highly excited radicals and ions could easily be obtained. Results obtained within 3 years project are summarized as follows.1) Using a simple helical coil antenna of several turns a high density plasma with a density reaching to 10^<13> cm^<-3> was obtained in Ar gas of 0.1 - 1 Pa in an external magnetic field with an RF power input of Several 100 W.Even in N_2 gas environment a plasma density of 10^2 cm^<-3> was also obtained easily.2) Developing a sputtering machine based on this plasma, preparation of CN_x films were performed and it was found that increasing nitrogen flux brought an increase of N content in the films and succeeded in obtaining stoichiometric film composition by controlling C and N flux appropriately. Films were composed of mixture of sp^2 and sp^3 phases that increased with N content.3) Micro-hardness of the films was not so high with a value of about 25 GPa in the condition of ion bombardment at a nearly stoichiometric composition. It was considered that softening of films was induced by the existence of graphite phase and impurity atoms such as O and/or H in the films causing polymer-like compound formation.

作为下一代最具吸引力的超硬氮化物材料之一的β-C_3N_4薄膜的形成研究一直在1997年至1999年间进行。第一个目标是通过开发低压下操作的高密度螺旋波激发等离子体溅射源，可以很容易地获得高激发的自由基和离子，项目三年内取得的成果总结如下：1）。使用简单的几匝螺旋线圈天线，在 0.1 - 1 Pa 的 Ar 气体中，在 RF 功率输入为数百W。即使在N_2气体环境下，也可以轻松获得10^2cm^-3>的等离子体密度。2)基于该等离子体开发溅射机，进行CN_x薄膜的制备结果发现，增加氮通量会导致薄膜中N含量的增加，通过适当控制C和N流量，成功获得化学计量的薄膜组成，薄膜由sp^2和sp^3相的混合物组成，且薄膜由随N增加的sp^2和sp^3相的混合物组成。 3）在接近化学计量组成的离子轰击条件下，薄膜的显微硬度并不高，约为25 GPa，认为薄膜的软化是由于石墨相的存在引起的。薄膜中的O和/或H等杂质原子导致聚合物状化合物的形成。