異種圧電材料を集積した革新的超音波MEMSデバイスおよび高性能超音波撮像器の創出

创建集成不同类型压电材料的创新超声波 MEMS 器件和高性能超声波成像仪

基本信息

  • 批准号:
    22KJ0232
  • 负责人:
  • 金额:
    $ 1.09万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for JSPS Fellows
  • 财政年份:
    2023
  • 资助国家:
    日本
  • 起止时间:
    2023-03-08 至 2024-03-31
  • 项目状态:
    已结题

项目摘要

In FY2022, the progress mainly includes 3 parts.1. The best structure for a dual-piezo-layer pMUT combination was simulated. The material used for the transmitting layer and receiving layer was simulated. Based on the simulation result, we found that the performance of dual-layer-pMUT was about 2.3 to 2.8 times higher than the conventional type pMUT. Considering the fabrication feasibility, the fabrication process was designed.2. The deposition condition for hetero-integration of the dual piezoelectric layer was researched. Based on the simulation result, we first realized the integration of single crystal AlN stacked on PMN-PT thin film by selecting suitable intermediate electrodes. Next, we explored the deposition condition for pure-perovskite-phase PZT stacked on AlN thin film. As a result, the integration of heterogeneous thin films stacked on top of each other succeeded3. The dual-layer pMUT was fabricated and characterized. We fabricated AlN/PMN-PT type pMUT and PZT/AlN type pMUT. The actuation of all the piezoelectric layers was confirmed by applying driving voltage on the thin film. Up to now, the resonant frequency and transmitting performance of the devices were characterized. Now we are setting up experiments for sensitivity measuring.
2022财年,进展主要包括三部分:1.对双压电层 pMUT 组合的最佳结构进行了仿真。对发射层和接收层所用的材料进行了模拟。根据仿真结果,我们发现双层pMUT的性能比传统类型pMUT高出约2.3至2.8倍。考虑到制作的可行性,设计了制作工艺; 2.研究了双压电层异质集成的沉积条件。基于仿真结果,我们首先通过选择合适的中间电极实现了单晶AlN堆叠在PMN-PT薄膜上的集成。接下来,我们探索了在 AlN 薄膜上堆叠纯钙钛矿相 PZT 的沉积条件。结果,彼此堆叠的异质薄膜的集成成功了3。双层 pMUT 的制造和表征。我们制造了 AlN/PMN-PT 型 pMUT 和 PZT/AlN 型 pMUT。通过在薄膜上施加驱动电压来确认所有压电层的驱动。到目前为止,我们已经对器件的谐振频率和传输性能进行了表征。现在我们正在开展灵敏度测量实验。

项目成果

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