Research on band-to-band tunneling via discrete dopants near pn junctions in Si nanodevices

硅纳米器件中 pn 结附近离散掺杂剂的带间隧道效应研究

• 批准号: 22K04216
• 负责人: Moraru Daniel
• 金额: $ 2.66万
• 依托单位: Shizuoka University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2022
• 资助国家: 日本
• 起止时间: 2022-04-01 至 2025-03-31
• 项目状态: 未结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-22K04216/
• 关键词: Esaki diode; single-electron; donor-acceptor pair; band-to-band tunneling; silicon-on-insulator; nanoscale; dopant quantum dot; silicon nanodevices; wavefunction; phonon

The purpose of this research was to elucidate effects of discrete dopants in tunneling currents flowing in Si nanodevices. Exploration of tunneling via dopants in transistors is fundamental for such analysis, for which we studied silicon-on-insulator devices doped with phosphorus (P). As a main target, we also fabricated and studied pn/pin diodes with narrow depletion layers.We reported room-temperature single-electron tunneling in highly-doped SOI transistors, in which multiple-dopant quantum dots can be formed.At low concentrations, single-electron tunneling via single dopants has been analyzed experimentally and theoretically.We also reported steps in band-to-band tunneling current in nanoscale tunnel diodes, ascribed to energy states in the depletion layer.

本研究的目的是阐明离散掺杂剂对硅纳米器件中隧道电流流动的影响。探索晶体管中掺杂剂的隧道效应是此类分析的基础，为此我们研究了掺杂磷 (P) 的绝缘体上硅器件。作为主要目标，我们还制造和研究了具有窄耗尽层的pn/pin二极管。我们报道了高掺杂SOI晶体管中的室温单电子隧道效应，其中可以形成多掺杂量子点。在低浓度下，通过单掺杂剂的单电子隧道效应已经在实验和理论上进行了分析。我们还报道了纳米级隧道二极管中带间隧道电流的阶跃，归因于耗尽层中的能态。

项目成果

Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors

高掺杂绝缘体上硅纳米级场效应晶体管的室温单电子隧道效应

• DOI: 10.35848/1882-0786/ac68cf
• 发表时间: 2022
• 影响因子: 2.3
• 作者: T. Teja. Jupalli; A. Debnath; G. Prabhudesai; K. Yamaguchi; P. Jeevan Kumar; Y. Ono; D. Moraru
• 通讯作者: D. Moraru

Inelastic Cotunneling in the Coulomb-blockade transport of donor-atom transistors

供体原子晶体管库仑阻断输运中的非弹性共隧道

• DOI: 10.1116/5.0097509
• 发表时间: 2023
• 作者: P. Yadav; S. Chakraborty; D. Moraru;A. Samanta
• 通讯作者: A. Samanta

Inkjet-printed Carbon Nanotubes on Silicon Nano-gaps: An analysis of Electrical Characteristics

硅纳米间隙上喷墨印刷碳纳米管：电特性分析

• 发表时间: 2023
• 作者: Rohit S. Singh; H. Kawanishi; T. Kaneko; K. Takagi; T. Aoki; Y. Neo; H. Mimura; M. Shimomura;D. Moraru
• 通讯作者: D. Moraru

Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors

纳米级晶体管中的可变势垒量子库仑阻塞效应

• DOI: 10.3390/nano12244437
• 发表时间: 2022-12-13
• 作者: Yadav P;Chakraborty S;Moraru D;Samanta A
• 通讯作者: Samanta A

Precise Deposition of Carbon Nanotube Bundles by Inkjet-Printing on a CMOS-Compatible Platform

在 CMOS 兼容平台上通过喷墨印刷精确沉积碳纳米管束

• DOI: 10.3390/ma15144935
• 发表时间: 2022
• 影响因子: 3.4
• 作者: R. S. Singh; K. Takagi; T. Aoki; J.;D. Moraru
• 通讯作者: D. Moraru