Research on Large-Scaled Line Plasma Production by Microwave

微波大规模生产线等离子体的研究

基本信息

批准号：
20540486
负责人：
SHINDO Haruo
金额：
$ 2.83万
依托单位：
Tokai University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2008
资助国家：
日本
起止时间：
2008 至 2010
项目状态：
已结题

项目摘要

Long line-shaped plasmas are inevitable in material processing in manufacturing industries, such as solar cell film CVD, flat panel displays (FPDs), and various surface modification of large-area thin films. In this work, a newly proposed method of large-scaled line plasma production is studied. In this method, microwave power of frequency of 2.45 GHz in a narrowed and flattened rectangular waveguide is employed to produce a long uniform linear plasma. Since the width of waveguide is very close to the cutoff condition, the wavelength of microwave inside the guide is extremely lengthened, providing a condition of long linear high density plasma with a great uniformity.The narrowed rectangular wave-guide of 1.0 and 2.0 m in length and 5mm in height were prepared and the width of the waveguide is 61.5 mm-62.0 mm which is very closed to the cut-off condition of microwave. The waveguide has a long linear slot antenna on the top surface to launch the microwave power into the discharge plasma … More chamber of 1.0 and 2.0 m in length. At the end of wave guide, a short plunger was quipped to produce a standing microwave and to adjust the phase of the standing wave, hence the uniformity of the plasma thus produced. The plasmas of Ar at the pressures of 100 mTorr to 500 mTorr were produced by employing an extremely long microwave wavelength. The parameters of plasma thus produced were three-dimensionally measured by a Langmuir probe.The axial profile of electron density was extremely flat and the plasma uniformity was within 4 % in the entire plasma over 2 m long. It was also found that the profile of electron density showed a standing wave like profile for the short plunger position. To be specific, the electron density measured in a fixed axial position showed a standing wave-like profile, indicating the short plunger has functions of standing wave generation and the phase-shifter as expected. The value of electron density in the plasma showed a very high value, as high as 1x10^<12> cm^<-3> at the pressure of 100mTorr and the microwave power of 1 kW, indicating that the plasma electron density is adequately high above the cut-off condition of microwave. It was experimentally verified that the axially uniform plasma production has a threshold in microwave, above which the electron density becomes adequately higher than the microwave cut-off density. In these conditions, the microwave power comes onto the short plunger and is reflected, producing a standing wave, and thus the plasma uniformity can be improved very much. It is concluded thus that the present method can provide a powerful tool of large-scaled linear uniform plasma production in length more than 2 m. Less

长线形等离子体在制造行业的材料加工中是不可避免的，例如太阳能电池薄膜CVD、平板显示器（FPD）以及大面积薄膜的各种表面改性。在这项工作中，一种新提出的大面积等离子体处理方法。在该方法中，研究了缩放线等离子体的产生，由于波导的宽度非常接近截止，因此在狭窄且扁平的矩形波导中采用频率为 2.45 GHz 的微波功率来产生长的均匀线性等离子体。在这种条件下，波导内微波的波长被极大地拉长，提供了均匀性好的长线状高密度等离子体的条件。制备了长1.0和2.0m、高5mm的窄化矩形波导，宽度为波导的尺寸为61.5 mm-62.0 mm，非常接近微波的截止条件。波导的顶面有一个长的线性缝隙天线，用于将微波功率发射到等离子体放电室中。在波导的末端装有一个短柱塞，以产生驻波并调节驻波的相位，从而产生均匀的Ar等离子体。使用极长的微波波长产生100 mTorr至500 mTorr的压力，并通过Langmuir探针对由此产生的等离子体参数进行三维测量。电子密度的轴向分布非常好。平坦且在整个等离子体中超过2m长的等离子体均匀性在4％以内。还发现对于短柱塞位置，电子密度的轮廓呈现驻波状轮廓。固定轴向位置呈现驻波状轮廓，表明短柱塞具有预期的驻波产生和移相器功能。等离子体中的电子密度值表现出非常高的值，高达1x10^<12。 > cm^-3 在100mTorr的压力和1kW的微波功率下，表明等离子体电子密度在微波截止条件之上足够高。实验证明，轴向均匀等离子体的产生具有阈值。在微波中，电子密度变得充分高于微波截止密度。在这些条件下，微波功率到达短柱塞并被反射，产生驻波，因此可以极大地改善等离子体均匀性。 .由此得出结论表明本方法可以为长度超过2 m的大规模线性均匀等离子体生产提供有力的工具。