Consolidation of Diamond-Based Composite by Rapid Sintering Using CVD-Coated Powder

使用 CVD 涂层粉末快速烧结固结金刚石基复合材料

• 批准号: 24760558
• 负责人: KATSUI Hirokazu
• 金额: $ 2.83万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2012
• 资助国家: 日本
• 起止时间: 2012-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-24760558/
• 关键词: ダイヤモンド; 炭化ケイ素; シリカ; 化学気相析出; 緻密化; 放電プラズマ焼結; コア/シェル構造; 複合体; 炭化シリコン; コンポジット; コアシェル構造; 回転式CVD; プラズマ放電焼結; 粉末コーティング; 難焼結材; SiC; SiO2; ナノ膜

Polycrystalline Diamonds (PCDs) are generally prepared by sintering at ultra-high pressure about several GPa because of low sinterability and transformation to graphite at high temperatures. This research aimed to prepare dense Diamond-based composites under moderate pressures (below 100 MPa) by Spark Plasma sintering (SPS) using nano-composite powders via a rotary chemical vapor deposition (CVD) technique.SiC nano-layers were coated on Diamond powder by rotary CVD. The Diamond/SiC core/shell nano-structured powder was consolidated by SPS with SiO2 powder. The resultant Diamond-based composite with SiC and SiO2 exhibited the high relative density of 94% and the high Vichers hardness of 39 GPa.

多晶金刚石(PCD)由于烧结性低且在高温下会转变为石墨，通常通过在几GPa左右的超高压下烧结来制备。本研究旨在通过旋转化学气相沉积（CVD）技术使用纳米复合材料粉末在中等压力（100 MPa以下）下通过火花等离子烧结（SPS）制备致密的金刚石基复合材料。在金刚石粉末上涂覆SiC纳米层通过旋转CVD。金刚石/SiC核/壳纳米结构粉末通过SPS与SiO2粉末固结。所得的SiC和SiO2金刚石基复合材料具有94%的高相对密度和39 GPa的高维氏硬度。

项目成果

Silicon carbide coating on diamond powder by rotary chemical vapor deposition

旋转化学气相沉积法在金刚石粉末上涂覆碳化硅

• DOI: 10.4028/www.scientific.net/kem.508.65
• 发表时间: 2012
• 期刊: Key Engineering Materials
• 作者: H. Katsui;Z. He and T. Goto
• 通讯作者: Z. He and T. Goto

SPS Sintering of SiC/SiO2 nano-composite prepared by rotary CVD

旋转CVD制备SiC/SiO2纳米复合材料的SPS烧结

• 发表时间: 2013
• 作者: Zhenhua He;Hirokazu Katsui;Rong Tu;Takashi Goto;Zhenhua He・Hirokazu Katsui・Rong Tu・Takashi Goto
• 通讯作者: Zhenhua He・Hirokazu Katsui・Rong Tu・Takashi Goto

Effects of SiO2 Nano-layer Thickness on Consolidation and Properties of SiC(core)/SiO2(shell) Structured Composite by CVD and SPS

CVD和SPS研究SiO2纳米层厚度对SiC(核)/SiO2(壳)结构复合材料固结及性能的影响

• 发表时间: 2013
• 作者: Zhenhua He;Hirokazu Katsui;Rong Tu and Takashi Goto
• 通讯作者: Rong Tu and Takashi Goto

Consolidation of SiC Powder Coated with SiO_2 Nano-layer by Spark Plasma Sintering, Key Engineering Materials

放电等离子烧结固结SiO_2纳米层SiC粉末，关键工程材料

• 发表时间: 2014
• 期刊: Key Engineering Materials
• 作者: Z. He;H. Katsui;R. Tu;T. Goto
• 通讯作者: T. Goto

SiC/SiO2 powder prepared by rotary CVD and its densification by spark plasma sintering

旋转CVD制备SiC/SiO2粉末及其放电等离子烧结致密化

• 发表时间: 2013
• 作者: Zhenhua He;Hirokazu Katsui;Rong Tu;Takashi Goto
• 通讯作者: Takashi Goto