Understanding and Control of Electronic Properties of Nanometer-thick Dielectric Films

纳米厚电介质薄膜电子特性的理解和控制

• 批准号: 19106005
• 负责人: TORIUMI Akira
• 金额: $ 65.81万
• 依托单位: The University of Tokyo
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (S)
• 财政年份: 2007
• 资助国家: 日本
• 起止时间: 2007 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-19106005/
• 关键词: 電気・電子材料; 誘電体物性; 超薄膜; 表面・界面物性; 界面ダイポール; XPS; 構造相転移; Higher-k膜; GeO2; Fermi-level Pinning; ESR; 高圧酸化; ショットキーバリア高さ; High-k膜; Ge; Si-doped HfO2; HfLaOx

The gate insulator thickness is required to be thinned for enhancing semiconductor device performances. This project has aimed at the thinning the insulator thickness electrically by increasing the dielectric constant of the films instead of thinning the physical thickness. Through this research, the energy barrier heights of the insulator films with regard to Si have been obtained systematically. In addition, the stability of dielectric constant, the dipoles formed at interfaces between such films and conventional insulator(SiO_2) have been deeply investigated and modeled in terms of atom kinetics in the bulk films and at the interfaces. Furthermore, hygroscopic properties of rare-earth metal oxides have been characterized thermodynamically and the defect generation origin in GeO_2 which will be a new insulator for new semiconductor(Ge) has been also experimentally clarified.

为了提高半导体器件的性能，需要减薄栅极绝缘体的厚度。该项目的目的是通过增加薄膜的介电常数而不是减薄物理厚度来以电学方式减薄绝缘体厚度。通过这项研究，系统地获得了绝缘体薄膜对于Si的能垒高度。此外，介电常数的稳定性以及在此类薄膜与传统绝缘体（SiO_2）之间的界面处形成的偶极子已根据体膜和界面中的原子动力学进行了深入研究和建模。此外，稀土金属氧化物的吸湿特性已得到热力学表征，并且实验阐明了GeO_2（将成为新型半导体（Ge）的新绝缘体）中缺陷产生的根源。

项目成果

Direct LaLuO3/Ge Gate Stack Formation by Interface Layer Scavenging and Subsequent Low Temperature O2 Annealing

通过界面层清除和随后的低温 O2 退火直接形成 LaLuO3/Ge 栅叠层

• 发表时间: 2010
• 作者: T.Tabata; C.H.Lee; K.Kita; A.Toriumi
• 通讯作者: A.Toriumi

Thermodynamics and kinetics for suppression of GeO desorption by high pressure oxidation of Ge

Ge 高压氧化抑制 GeO 解吸的热力学和动力学

• 发表时间: 2009
• 作者: K.Nagashio; C.H.Lee; T.Nishimura; K.Kita; A.Toriumi
• 通讯作者: A.Toriumi

Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization

通过抑制GeO挥发来控制GeO2薄膜和Ge/GeO2界面的性能

• 发表时间: 2009
• 作者: K.Kita; C.H.Lee; T.Nishimura; K.Nagashio; A.Toriumi
• 通讯作者: A.Toriumi

Dielectric and electrical properties of amorphous La1.xTaxOy films as higher-k gate insulators

非晶 La1.xTaxOy 薄膜作为高 k 栅极绝缘体的介电和电学特性

• 发表时间: 2009
• 作者: Y.Zhao; K.Kita; K.Kyuno; A.Toriumi
• 通讯作者: A.Toriumi

Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface

由于金属/锗界面处的金属诱导间隙态而产生强费米能级钉扎的证据

• 发表时间: 2007
• 作者: T. Nishimura; K. Kita;A. Toriumi
• 通讯作者: A. Toriumi