Control of electrochemical reaction by amorphous carbon nano-particles and development of high-sensitive gas sensor

非晶碳纳米粒子控制电化学反应及高灵敏气体传感器的研制

• 批准号: 23656242
• 负责人: HONDA Kensuke
• 金额: $ 2.5万
• 依托单位: Yamaguchi University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Challenging Exploratory Research
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2012
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23656242/
• 关键词: ダイヤモンドライクカーボン; 半導体; センサー材料; アモルファスカーボン; ホウ素; 電気化学触媒; マンガンイオン検出; ナノ微粒子; 電気化学ガスセンサー; 半導体材料ガス; 高感度検出

The objective of this study was to create a-C surface with higher electro-catalytic activity by controlling chemical compositions and sizes of amorphous carbon nano-particles, and to establish the electrochemical method to detect hazardous materials like AsH3and PH3quantitatively. The concentration of dopant atoms showing p type conductivity was tried to be controlled. Carrier concentration of p-type a-C could be successfully varied in the range from 1014cm-3to 1.3×1019cm-3 by changing the ratio of trimethyl borateand n-hexane used as source materials. Boron atoms were confirmed to serve as an electro-catalyst for hydrogen evolution. Since the reactivity to hydrogen evolution could be suppressed at a-C films doped with tiny amounts of boron, Mn2+ion could be efficiently reduced. It results that Mn2+ion at extremely lower concentration (0.02 mM) than discharge standard (0.2 mM) could be detected quantitatively.

本研究的目的是通过控制无定形碳纳米颗粒的化学成分和尺寸来创建具有更高电催化活性的a-C表面，并建立电化学方法来定量检测AsH3和PH3等有害物质的掺杂原子浓度。尝试将p型a-C的载流子浓度控制在1014cm-3至1014cm-3的范围内。通过改变作为原料的硼酸三甲酯和正己烷的比例，1.3×1019cm-3被证实可以作为析氢的电催化剂，因为在a-C薄膜中掺杂微小的硼原子可以抑制析氢的反应性。可以有效地减少硼、Mn2+离子的含量，结果可以检测到比排放标准（0.2mM）极低浓度（0.02mM）的Mn2+离子。定量地。

项目成果

ホウ素ドープdiamond-like carbon薄膜のホウ素添加量に対する電気化学反応性

硼掺杂类金刚石碳薄膜的电化学反应性取决于硼含量

• 发表时间: 2012
• 作者: 金蓮花;斎藤壮;八木亮磨;山口晃司;若子裕亮;近藤英一;楢木野宏・吉永浩亮・中原亮・本多謙介
• 通讯作者: 楢木野宏・吉永浩亮・中原亮・本多謙介

Improvement of Conductivity by incorporation of Boron atoms in Hydrogenated Amorphous Carbon Films fabricated by Plasma CVD methods and its Electrochemical Properties

等离子CVD法制备的氢化非晶碳薄膜掺入硼原子提高电导率及其电化学性能

• 发表时间: 2012
• 期刊: ECS transaction
• 作者: Hiroshi Naragino;Kosuke Yoshinaga;Seiji Tatsuta;Kensuke Honda
• 通讯作者: Kensuke Honda

Synthesis of porous platinum-ion-doped titanium dioxide and the photocatalytic degradation of 4-chlorophenol under visible light irradiation

• DOI: 10.1016/j.apcatb.2012.03.026
• 发表时间: 2012-06
• 期刊: Applied Catalysis B-environmental
• 影响因子: 22.1
• 作者: S. Yamazaki;Yuhei Fujiwara;Shinya Yabuno;Kenta Adachi;K. Honda

Fabrication of Silicon and Carbon Based Wide-Gap Semiconductor Thin Films for High Conversion Efficiency

用于高转换效率的硅和碳基宽禁带半导体薄膜的制造

• 发表时间: 2012
• 作者: Kohsuke Yoshinaga;Hiroshi Naragino;Akira Nakahara;Sakuya Tanaka;Kensuke Honda
• 通讯作者: Kensuke Honda

Improvement of Conductivity by incorporation of Boron atoms in Hydrogenated Amorphous Carbon Films fabricated by Plasma CVD methods and Electrochemical Properties of the films

等离子CVD法制备的氢化非晶碳薄膜中掺入硼原子提高电导率及薄膜的电化学性能

• 发表时间: 2011
• 作者: Kensuke Honda;Hiroshi Naragino;Kosuke Yoshinaga;Seiji Tastuta
• 通讯作者: Seiji Tastuta