Metal-insulator transition and orbital state of quasi-one-dimensional vanadium system

准一维钒系金属-绝缘体跃迁与轨道态

• 批准号: 23540412
• 负责人: SATO Hitoshi
• 金额: $ 2.5万
• 依托单位: Hiroshima University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011 至 2013
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23540412/
• 关键词: 金属絶縁体転移; 擬一次元系; バナジウム系; 光電子分光; 線二色性分光; 共鳴散乱; 軟X線共鳴散乱

In order to reveal the mechanism of metal - insulator transition of quasi-one-dimensional BaVS3 at 70 K, we have investigated the change of the V 3d state across the transition mainly by means of angle-resolved photoemission spectroscopy (ARPES) and soft x-ray absorption linear dichroism spectroscopy (LD). ARPES studies revealed that the a1g orbital forms a gap at 150 - 120 K, far above 70 K, due to one-dimensional instability, while the egp orbital forms a gap just at 70 K due to localization. LD studies, on the other hand, revealed that the occupancy ratio of the V 3d orbitals is unchanged across the transition. Theoretical analyses of the LD spectra highly suggest that the V 3d orbitals aligns with egp-egp-egp-a1g order along the V chain.

为了揭示金属的机制 - 在70 K处的准二维BAVS3的绝缘体过渡，我们已经研究了V 3D状态在整个过渡过程中的变化，主要是通过角度分辨的光发射光谱（ARPES）和软X射线吸收型线性二色二色光谱（LD）。 ARPES的研究表明，由于一维的不稳定性，A1G轨道在150-120 K时形成距离远高于70 K的间隙，而EGP轨道由于定位而在70 K处形成差距。另一方面，LD研究表明，V 3D轨道的占用比在整个过渡过程中没有变化。 LD光谱的理论分析强烈表明，V 3D轨道与沿V链的EGP-EGP-EGP-A1G顺序排列。

项目成果

Fermi-surface reconstruction involving two van Hove singularities across the antiferromagnetic transition in BaFe2As2

• DOI: 10.1016/j.ssc.2012.12.027
• 发表时间: 2011-07
• 期刊: Solid State Communications
• 影响因子: 2.1
• 作者: Y. Nakashima;A. Ino;S. Nagato;H. Anzai;H. Iwasawa;Y. Utsumi;H. Sato;M. Arita;H. Namatame;M. Taniguchi;T. Oguchi;Y. Aiura;I. Hase;K. Kihou;Ching Hua Lee;A. Iyo;H. Eisaki

VO2単結晶薄膜を用いた逆光電子分光

使用VO2单晶薄膜的反光电子能谱

• 发表时间: 2011
• 作者: 長尾浩樹;村岡祐治;平井正明 ;脇田高徳;内海有希;佐藤仁;横谷尚睦
• 通讯作者: 横谷尚睦

Polarization dependent angle - resolved photoemission study on quasi - one - dimensional BaVS3

准一维BaVS3的偏振相关角分辨光电子发射研究

• 发表时间: 2012
• 作者: H. Sato;K. Tobimatsu;A. Tanaka;H. Nakamura;H. Hayashi;J. Jiang;H. Iwasawa;K. Shimada;M. Atita;M. Nakatake;H. Namatame;M. Taniguchi
• 通讯作者: M. Taniguchi

Angle - resolved photoemission study on quasi - one - dimensional BaVS3

准一维BaVS3角分辨光电子发射研究

• 发表时间: 2011
• 作者: H. Sato;K. Tobimatsu;A. Tanaka;H. Nakamura;H. Hayashi;J. Jiang;T. Habuchi;D. Hirayama;H. Iwasawa;K. Shimada;M. Arita;M. Nakatake;H. Namatame;M. Taniguchi
• 通讯作者: M. Taniguchi

Electronic structures of ternary-layered semiconductor TlGaSe2 investigated by photoemission spectroscopy

光电子能谱研究三元层半导体 TlGaSe2 的电子结构

• DOI: 10.1002/pssc.201200863
• 发表时间: 2013
• 期刊: Phys. Status Solidi C
• 作者: S. Motonami;K. Mimura;Y. G. Shim;K. Wakita;H. Sato;Y. Utsumi;S. Ueda;M. Nakatake;K. Shimada;Y. Taguchi;K. Kobayashi;H. Namatame;M. Taniguchi;G. Orudzhev;N. Mamedov
• 通讯作者: N. Mamedov