Study of lasing threshold reduction caused by electron spin polarization in the active region of laser diodes

激光二极管有源区电子自旋极化引起激光阈值降低的研究

• 批准号: 23310094
• 负责人: KOH Shinji
• 金额: $ 11.9万
• 依托单位: Aoyama Gakuin University (2013)Nara Institute of Science and Technology (2011-2012)
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2011
• 资助国家: 日本
• 起止时间: 2011-04-01 至 2014-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-23310094/
• 关键词: 円偏光レーザ発振; スピン注入; 半導体量子井戸; GaAs(110); InP(110); スピン偏極; スピン緩和; スピン半導体レーザ; 低消費電力化; 量子井戸

Vertical cavity surface emitting lasers (VCSELs) driven by electrical spin injection have been investigated. We focused on the circularly polarized lasing and lasing threshold reduction caused by spin polarization in the active region of the VCSELs. We have investigated molecular beam epitaxy growth of Fe and FePt layers on GaAs(110) surfaces for the spin injection electrodes, and characterized the structures and magnetic properties of the layers. We succeeded in the spin injection into GaAs(110) quantum wells at low temperature. However, the degree of the circular polarization of the emission observed was about 5% which was unexpectedly low. A high degree of circular polarization, which was expected because of the long spin relaxation time of the electrons in GaAs(110) quantum wells, was not observed.

已经研究了由电旋转注射驱动的垂直空腔表面发射激光器（VCSEL）。我们专注于由VCSELS活性区域的自旋极化引起的圆极化激光和激光阈值的降低。我们已经研究了用于自旋注射电极的GAAS（110）表面上Fe和Fept层的分子束外延生长，并表征了层的结构和磁性。我们在低温下成功地注入了GAAS（110）量子井。但是，观察到的发射的圆极化程度约为5％，意外低。没有观察到高度的圆极化，这是由于没有观察到GAAS（110）量子孔的较长的自旋松弛时间。

项目成果

不揮発性光メモリ、光記憶装置、ネットワークルータ

非易失性光存储器、光存储设备、网络路由器

• 发表时间: 2011

Circularly polarized lasing over wide wavelength range in spin-controlled Absorption [103/cm] (110) vertical-cavity surface-emitting laser

自旋控制吸收 [103/cm] (110) 垂直腔表面发射激光器在宽波长范围内产生圆偏振激光

• DOI: 10.1016/j.ssc.2012.06.009
• 发表时间: 2012
• 期刊: Solid State Commun.
• 作者: S. Iba;S. Koh;and H. Kawaguchi
• 通讯作者: and H. Kawaguchi

Control of Electron Spin Relaxation Dynamics and Circularly Polarized Lasing in Semiconductor Lasers

半导体激光器中电子自旋弛豫动力学和圆偏振激光的控制

• DOI: 10.1380/jsssj.32.755
• 发表时间: 2011
• 期刊: Hyomen Kagaku
• 作者: 黄晋二;揖場聡;池田和浩;河口仁司
• 通讯作者: 河口仁司

Crystal growth of InGaAs/InAlAs quantum wells on InP(110) by MBE

InP(110)上MBE晶体生长InGaAs/InAlAs量子阱

• DOI: 10.1016/j.jcrysgro.2012.11.039
• 发表时间: 2013
• 期刊: J. Cryst. Growth
• 作者: Y. Yasuda;S. Koh;K. Ikeda;H. Kawaguchi
• 通讯作者: H. Kawaguchi

(110)スピン面発光半導体レーザの広帯域円偏光発振

(110)自旋面发射半导体激光器宽带圆偏振振荡

• 发表时间: 2011
• 作者: 揖場 聡;黄 晋二;池田 和浩;河口 仁司
• 通讯作者: 河口 仁司