Superlattice semiconductor photocathode for the electron beam source with a high brightness and a long NEA-surface lifetime.

用于电子束源的超晶格半导体光电阴极，具有高亮度和长NEA表面寿命。

• 批准号: 21740305
• 负责人: NISHITANI Tomohiro
• 金额: $ 3.08万
• 依托单位: The Institute of Physical and Chemical Research
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (B)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21740305/
• 关键词: フォトカソード; 高輝度電子源; ガリウムヒ素半導体; 超格子半導体; 負電子親和力表面; 長寿命化; 高耐久化; スピン偏極電子源

The aim of this study is the realization of the novel electron source using a semiconductor photocathode with high brightness and long NEA-surface-lifetime. This study found that the quantum confinement effect in a superlattice structure has the advantage of small energy spread of extracted electrons and the semiconductor which has small electron affinity and large band-gap energy had the advantage of long NEA-surface-lifetime. The p-GaN photocathode with a bulk structure for the long NEA-surface-lifetime and the InGaN-GaN superlattice photocathode for the generation of photoelectrons with small energy spread ware developed. As a successful result, the p-GaN photocathode achieved ten times longer lifetime than the GaAs photocathode with a bulk structure known as the conventional photocathode and the effective quantum confinement effect was observed by the quantum yield spectrum of the InGaN-GaN superlattice photocathode.

这项研究的目的是使用具有较高亮度且长nea表面的半导体光导电来实现新型电子源。这项研究发现，超晶格结构中的量子限制效应具有提取电子的能量传播的优势，并且具有较小的电子亲和力和较大的带隙能的半导体具有长NEA-Surface-liftime的优势。长NEA-Surface-liftime和Ingan-GAN超级晶格光电电极的P-GAN光导电，用于生成具有较小能量扩散式释放的光电子。作为成功的结果，p-gan光导电的寿命比具有散装结构的GAAS光（GAAS光电极）长十倍，称为常规光电阴极，有效的量子限制效应是通过Ingan-Gan超晶状体光电阴极的量子屈服光谱观察到的。