Ultra-high speed opto-electronic devices

超高速光电器件

• 批准号: 21560365
• 负责人: TAKANASHI Yoshifumi
• 金额: $ 3.41万
• 依托单位: Tokyo University of Science
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2009
• 资助国家: 日本
• 起止时间: 2009 至 2011
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-21560365/
• 关键词: 電子デバイス; 集積回路; 光検出デバイス; III-V化合物半導体; 超高速応答; Auger再結合

We have fabricated HEMT's with a strained InGaAs, whose mole fraction is close to that of InAs, as the channel have been fabricated and characterized high-frequency performances using a network analyser. HEMT's with the gate length of 0.1μm exhibited a current cut-off frequency(fT) research ranging over 200 GHz. We have also fabricated MSM-PD's with a strained InGaAs channel and characterized the optical response using a fiber laser with a bandwidth of 400 femt-seconds. MSM-PD's with a L & S of 0.2/0.6μm exhibited a pulse width less than 20 psec. This is because the strained InGaAs has a relatively high drift velocity of electrons. In addition, these MSM-PD's exhibited a responsivity more than one regardless of the channel width as thin as 10 nm. In this way, ultra-high speed OEIC's can be realized by simultaneously fabricating MSM-PD's and HEMT's on the same epitaxial wafer. Therefore, an application of these MSM-PD's to high-speed OEIC's for use in broad-band optical communication systems is expected.

我们已经用紧张的Ingaas制造了Hemt，其摩尔分数接近INAS，因为使用网络分析仪制造并表征了高频性能。 HEMT的栅极长度为0.1μm，暴露了当前的截止频率（FT）研究，范围超过200 GHz。我们还用紧张的INGAAS通道制造了MSM-PD，并使用带宽为400 femt秒的纤维激光器表征了光学响应。 L＆S为0.2/0.6μm的MSM-PD暴露于小于20 psec的脉冲宽度。这是因为紧张的INGAA具有相对较高的电子漂移速度。此外，这些MSM-PD的响应性均超过一个响应性，而不管通道宽度较薄，响应率较薄。这样，可以通过简单地在同一外延摇动上制造MSM-PD和HEMT来实现超高速度OEIC。因此，预计将这些MSM-PD应用于高速OEIC，以用于宽带光学通信系统。

项目成果

In0.75Ga0.25As/In0.53Ga0.47As同一基板上に作製したPHEMTの周波数特性

在同一 In0.75Ga0.25As/In0.53Ga0.47As 衬底上制作的 PHEMT 频率特性

• 发表时间: 2011
• 作者: 山崎陽一;是枝勇太;西尾結;遠藤裕;佐藤宏一;芳沢研哉;田口博久;高梨良文
• 通讯作者: 高梨良文

Dependence of Optical Response Time on Gate-to-Source Voltage for InAlAs/InAs/InGaAs Pseudomorphic High Electron

InAlAs/InAs/InGaAs 赝晶高电子光学响应时间对栅源电压的依赖性

• 发表时间: 2010
• 期刊: Extended Abstracts of the 2010 International Conference on Solid State Devices and Materials
• 作者: Takahisa Ando;Hirohisa Taguchi;Kazuya Uchimura;Miho Mochiduki;Tsutomu Iida and Yoshifumi Takanashi
• 通讯作者: Tsutomu Iida and Yoshifumi Takanashi

Characteristics of a pin-fin structure thermal-to-electric uni-leg device using a commercial n-type Mg2Si source

使用商用 n 型 Mg2Si 源的针翅结构热电单腿器件的特性

• 发表时间: 2009
• 作者: T. Nemoto;T. Iida;J. Sato;Y. Oguni;A. Matsumoto;T. Miyata;T. Sakamoto;T. Nakajima;H. Taguchi;K. Nishio;Y. Takanashi
• 通讯作者: Y. Takanashi

InAlAs/InAs/InGaAs系PHEMTの量子状態の解析

InAlAs/InAs/InGaAs PHEMT 量子态分析

• 发表时间: 2009
• 作者: 遠藤裕;安藤貴寿;是枝勇太;佐藤宏一;吉澤研哉;田口博久;高梨良文;田口博久;安藤貴寿
• 通讯作者: 安藤貴寿

Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on the same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer

在同一外延片上同时制作具有 In0.75Ga0.25As/InGaAs 沟道层的 PHEMT 和 MSM 光电探测器的特性

• 发表时间: 2011
• 作者: Hirohisa Taguchi;Yuta koreeda;Yutaka Endo;kouichi Sato;Kenya Yoshizawa;Yui Nishio;Tsutomu Iida and Yoshifumi Takanashi
• 通讯作者: Tsutomu Iida and Yoshifumi Takanashi