Fabrication of multi-integrated dielectric-magnetic thin film deposited by sputtering method

溅射法沉积多集成介电磁性薄膜的制备

• 批准号: 20860012
• 负责人: YOKOI Atsushi
• 金额: $ 2.04万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Young Scientists (Start-up)
• 财政年份: 2008
• 资助国家: 日本
• 起止时间: 2008 至 2009
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-20860012/
• 关键词: 誘電性; 磁性; スパッタ法; 誘電率; 誘電損失; 電気抵抗; 薄膜; ナノコンポジット; 磁性金属元素; 複合機能性薄膜; ナノグラニュラー構造; TiO2

Fe-Ti-O, Co-Hf-O and Co-Y-O thin films were deposited by radio-frequency magnetron sputtering method, and the relationship between the magneto-dielectric properties and electrical resistivity of these thin films were investigated in order to clarify the possibility of a new magneto-dielectric material. The electrical resistivity was related to the variations in the magnetization and dielectric loss of Fe-Ti-O and Co-Hf-O thin films ; therefore, the electrical resistivity range of 1.0×10^6-1.0×10^8 (μΩcm) lead to the suitable magneto-dielectric properties in the oxides dielectric thin films. On the basis of the electrical resistivity, Co-Y-O thin films were deposited by sputtering method. The dielectric constant and dielectric loss of this thin film measured at a frequency of 100kHz were 39 and 0.56, respectively. Also, the magnetization of this thin film was 11kG, using the AGM. From these results, the control of the electrical resistivity in the thin film may have exerted and influence on the fabrication of the magneto-dielectric thin film.

Fe-Ti-O，Co-HF-O和Co-Y-O薄膜通过射频磁控溅射方法沉积，并研究了这些薄膜的磁性射电特性与电阻性的电抗性之间的关系，以阐明新的磁电材料的可能性。电抗性与Fe-Ti-O和Co-HF-O薄膜的磁化和饮食损失的变化有关。因此，抗性范围为1.0×10^6-1.0×10^8（μΩCM），导致氧化物二号薄膜中合适的磁性含量。在电阻的基础上，通过溅射方法沉积了二-O-O薄膜。以100kHz的频率测得的线性常数和温和膜分别为39和0.56。同样，使用AGM，这种薄膜的磁化为11kg。从这些结果中，薄膜中电阻的控制可能已经过期，并影响了磁性薄膜的制造。

项目成果

ナノ複相Co-Nb-O膜の作製とその複合機能性

纳米多相Co-Nb-O薄膜的制备及其复合功能

• 发表时间: 2009
• 作者: 大沼繁弘;岩佐忠義
• 通讯作者: 岩佐忠義

Phase transition-crystal structure relations in ferroelectric Bi2. 5Na1. 5Nb3O12 compound by molecular dynamics simulation

铁电 Bi2 中的相变-晶体结构关系。

• 发表时间: 2009
• 期刊: Materials Chemistry and Physics 116
• 作者: Atsushi Yokoi;Hiroshi Masumoto;Junji Sugishita
• 通讯作者: Junji Sugishita

Phase transition - crystal structure relations in ferroelectric Bi_<2.5>Na_<1.5>Nb_3O_<12> compound by molecular dynamic simulation

分子动力学模拟铁电Bi_<2.5>Na_<1.5>Nb_3O_<12>化合物的相变-晶体结构关系

• 发表时间: 2009
• 期刊: Materials Chemistry and Physics (印刷中)
• 作者: Atsushi Yokoi;Hiroshi Masumoto and Junji Sugishita
• 通讯作者: Hiroshi Masumoto and Junji Sugishita

ナノ複相Co-Nb-0膜の作製とその複合機能性

纳米多相Co-Nb-0薄膜的制备及其复合功能

• 发表时间: 2009
• 作者: 大沼繁弘;岩佐忠義;横井敦史;増本博
• 通讯作者: 増本博