Fabrication of functional organic semiconductor interfaces using charge-transfer materials and its application to realize high-performance organic field-effect transistors

使用电荷转移材料制备功能有机半导体界面及其在实现高性能有机场效应晶体管中的应用

基本信息

批准号：
18360014
负责人：
HASEGAWA Tatsuo
金额：
$ 10.44万
依托单位：
National Institute of Advanced Industrial Science and Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

项目摘要

In this research project we undertook to develop interface engineering of organic field-effect transistors (FETs) by using charge-transfer (CT) materials. Within the research term, we successfully achieved high performance channel materials, applied inkjet printing into fabrication of organic metal electrodes, and developed methods for controlling film morphologies. Here we outline the following three topics;1) Tetrathiafulvalene-based high mobility channel materials: Development of molecular semiconductors with high carrier mobility is one of most important subjects in organic transistors. We found that HMTTF single crystal FETs exhibit high mobilities exceeding 10 cm2/Vs. To achieve this performance, we found it indispensable to optimize carrier injections at source/drain contacts by using organic metal electrodes using TTF-TCNQ.2) Inkjet printing of molecular conductor films: Important issue in organic electronics is to apply printing techniques for manufacturing thin-film devices. … More In order to apply organic metal electrodes into printing processes, we developed "double-shot inkjet printing", where inks of component donor and acceptor molecules are individually printed at the same position to form complexes just on the substrates. The method enables us to obtain patterned thin films of TTF-TCNQ showing electrical conductivity higher than 10 S/cm. We also found that pentacene thin film FETs using the inkjet printed TTF-TCNQ films as source/drain electrodes show fairly sharp on/off switching and low threshold gate voltage compared with devices composed of conventional gold electrodes.3) Interface engineering of molecular semiconductor films: We found that the films of DBTTF were grown to have huge grain size exceeding 0.02mm on top of fully trimethylsilyl-substituted SiO2 gate dielectric layers by using HMDS. We also found that the decrease of hydrophobic nature of substrate surfaces affords the decrease of the grain sizes, and that the film morphology is closely associated with the subthreshold properties of organic thin film FETs. Less

在这项研究项目中，我们通过在研究术语中使用电荷转移来开发有机场效应晶体管（FET）的界面工程，我们成功地酸痛了控制膜形态的方法。使用TTF-TCNQ的有机金属电极。2）分子导体膜的喷墨打印：有机电子中的重要问题是将技术应用于制造薄膜设备，我们开发了“双弹药墨水喷墨”。供体和受体分子在相同的位置上单独打印，仅在底座上形成。与tintiontiontiontiontiontiontiontiontiontiontiontion的旧电极相比，分子半导体膜的界面工程相比，相当清晰/关闭阈值栅极电压相当清晰。使用HMD的层

项目成果

期刊论文数量（0）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Narrowing effects in electron spin resonance spectra of organic transistors.

有机晶体管电子自旋共振光谱的窄化效应。

DOI：
发表时间：
2008
期刊：
Kotai Butsuri(in Japanese) Vol.43(in press)
影响因子：
0
作者：
R.Maeda;et. al.;Tatsuo Hasegawa and Hiroyuki Matsui
通讯作者：
Tatsuo Hasegawa and Hiroyuki Matsui

Molecular Donor-Acceptor Combinations as Functional Components of Organic Transistors

作为有机晶体管功能组件的分子供体-受体组合

DOI：
发表时间：
2007
期刊：
影响因子：
0
作者：
長谷川達生;松井弘之;Tatsuo Hasegawa;Tatsuo Hasegawa
通讯作者：
Tatsuo Hasegawa

Molecular donor-acceptor compounds as prospective organic electronics materials

DOI：
10.1143/jpsj.75.051016
发表时间：
2006-05-01
期刊：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
影响因子：
1.7
作者：
Horiuchi, Sachio;Hasegawa, Tatsuo;Tokura, Yoshinori
通讯作者：
Tokura, Yoshinori

有機半導体装置の製造方法

有机半导体器件的制造方法

DOI：
发表时间：
2005
期刊：
影响因子：
0
作者：
通讯作者：

Intersection of Molecular Conductors and Organic Transistors

分子导体和有机晶体管的交叉点

DOI：
发表时间：
2007
期刊：
影响因子：
0
作者：
S. Horiuchi;T. Hasegawa;and Y. Tokura;S.Horiuchi et al.;Tatsuo Hasegawa;長谷川達生;Tatsuo Hasegawa;長谷川達生;Tatsuo Hasegawa;Tatsuo Hasegawa
通讯作者：
Tatsuo Hasegawa