Spin Manipulation of Coupled Spin Structures in Semiconductor Macro-atoms

半导体宏观原子中耦合自旋结构的自旋操纵

基本信息

批准号：
18310074
负责人：
GOTOH Hideki
金额：
$ 5.09万
依托单位：
NTT Basic Research Laboratories
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2006
资助国家：
日本
起止时间：
2006 至 2007
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-18310074/
关键词：
Nano-materials Semiconductor Physics Optical Properties

项目摘要

We achieved the fabrication method of macro-atom samples for single spin manipulation and developed measurement techniques of these samples. Moreover, we created macro-atoms with semiconductor nano-wire structures.As for the spin manipulation, we used GaAs/AlGaAs quantum well structures whose well widths were smaller than the exciton Bohr radius. We processed electrodes to pump electrons into the quantum wells and measured photoluminescence(PL) properties with the micro-PL method. In the measurement, very fine PL peaks were observed, which originate from localized excitons as well as localized charged excitons. We also found the method to efficiently create charged excitons and obtain highly polarized excitons. These results are fundamental requirements to manipulate single spins.We observed very sharp PL peaks from semiconductor nano-wires including quantum dot structures in wires. Their propreties were very similar to those of conventional In GaAs quantum dots. We also found these na … More no-wires showed highly amsotropic PL properties. This proprety is due to the spatial symmetry of nano-wire samples. These results clearlyshow that the nano-wire fabrication technique can be applied to create macro-atom structures.We fabricated various nano-wires to obtain best macro-atoms having good optical properties. Most of previous nano-wires used GaAs substrates. Whereas for our samples, Si substiates were used to fit to many conventional electronic devices. We grew GaP nano-wires and GaAs nano-wires on GaP wires. Both these wires show good PL propreties. Moreover, we developed to align GaP nano-wires employing the position controrlling technique of gold paiticle on Si surface. We also devised a method creating bended GaP structures having thin GaAs regions with an annealing technique. As for device structure, field effect transistors with InAs nano-wires were fabricated and clear transistor characteristics were confirmed at room temperature. Recently, we observed PL emission in telecommunication wavelength regions at room tempreature, which have not yet been repoited from other research groups.In the near future, we will develop the concrete method to manipulate single spin and to control coupled spins in macro-atoms. Our result in this research term is the important milestones to proneer a new research field with macro-atoms physics and its device applications. Less

我们实现了用于单个自旋操作的宏观原子样品的制造方法，并开发了这些样品的测量技术。此外，我们创建了具有半导体纳米线结构的宏观原子。作为自旋操作，我们使用了GAAS/藻类量子量井结构，其宽度比令人兴奋的Bohr半径小。我们处理电子将电子泵入量子井中，并使用Micro-PL方法测量的光致发光（PL）特性。在测量中，观察到非常细的PL峰，这些峰源自局部激子以及局部带电的激子。我们还找到了有效创建带电激子并获得高极化激子的方法。这些结果是操纵单旋转的基本要求。我们观察到来自半导体纳米 - 线的非常尖锐的PL峰，包括电线中的量子点结构。他们的投资我们与GAAS量子点中的常规量非常相似。我们还发现了这些NA…更多的不螺旋显示了高度的氨基化PL性质。这种预言是由于纳米线样品的空间对称性。这些结果清楚地表明，可以应用纳米线制造技术来创建宏观原子结构。我们制造了各种纳米系，以获得具有良好光学特性的最佳宏观原子。以前的大多数纳米系都使用了GAAS底物。而对于我们的样品，SI子tiat量用于适合许多常规的电子设备。我们在间隙电线上种植了间隙纳米线和GAAS纳米线。这两根电线都显示出良好的PL Properties。此外，我们开发了用于使用SI表面上金无疑的位置控制技术的间隙纳米线。我们还设计了一种具有带退火技术的较薄GAAS区域的弯曲缝隙结构的方法。至于设备结构，制造了带有INAS纳米线的现场效应晶体管，并在室温下确认清晰的晶体管特征。最近，我们观察到室内电信波长区域的PL发射，尚未从其他研究小组中重新涂抹。在本研究术语中，我们的结果是倾向于具有宏观原子Physis及其设备应用的新研究领域的重要里程碑。较少的