Investigation of the Emission Mechanism and Property Control of Highly Fluorescent Polyimides via Application of High Static Pressure

高静压高荧光聚酰亚胺的发射机理和性能控制研究

基本信息

批准号：
16350122
负责人：
ANDO Shinji
金额：
$ 9.66万
依托单位：
Tokyo Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2004
资助国家：
日本
起止时间：
2004 至 2006
项目状态：
已结题

项目摘要

The investigators aimed to clarify the photo-absorption and fluorescent emission behaviors of conventional polyimides (PIs) and highly fluorescent PIs by applying high/very high static pressure (1.0-90,000 atm) to PI thin films. The intermolecular distances between PI chains are effectively reduced at elevated pressures, which straightforwardly enhance the intermolecular charge transfer (CT) interactions. In addition, novel thermally stable PIs having optical functionalities can be developed based on findings. For the experiments, "high hydrostatic pressure cell method" and "diamond anvil (DA) method" were adopted to apply high (<400 MPa) and very high pressures (<10 GPa) to PI thin films, respectively. The variations in optical properties and structural changes of the PI films generated at high pressures were precisely measured by using not only conventional spectroscopies but also micro spectrophotometric techniques. Furthermore, the photophysical mechanisms of the fluorescent emission at high quantum yields (0.3 or more) observed for the highly fluorescent PIs were partly clarified by these experiments. In addition, various interesting phenomena which lead to the development of novel thermally stable optical materials having high functionalities were observed. Moreover, the methods developed in this study and the findings obtained in the experiments are beneficial to improve the performance of the highly fluorescent PIs with increasing the quantum yields and the emission of strong white luminescence.

研究人员旨在通过将高/非常高的静压（1.0-90,000 atm）施加到PI薄膜中，以阐明常规聚酰亚胺（PIS）和高荧光PI的光吸收和荧光发射行为。 PI链之间的分子间距离在高压时有效降低，这直接增强了分子间电荷转移（CT）相互作用。此外，可以根据发现可以开发具有光学功能的新型热稳定的PI。对于实验，采用了“高静水压力细胞法”和“钻石砧（DA）方法”，以分别对PI薄膜施加高（<400 MPa）和非常高的压力（<10 GPA）。精确测量了在高压下生成的PI膜的光学特性和结构变化的变化，不仅是通过使用常规光谱镜，还使用微分光度计量技术来测量。此外，这些实验部分阐明了高量子产率下荧光发射的光物理机制（0.3或更多）。此外，观察到具有高功能的新型热稳定光学材料的发展各种有趣的现象。此外，本研究中开发的方法以及实验中获得的发现有益于提高高荧光PI的性能，并增加量子产率和强白发光的发射。