Development of the Creation Method of New Functional Evolved-Nanotubes by Using Plasma Ion Irradiation

等离子体离子辐照新型功能演化纳米管制备方法的发展

基本信息

批准号：
13852016
负责人：
HATAKEYAMA Rikizo
金额：
$ 77.04万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (S)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2005
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13852016/
关键词：
alkali-fullerene plasma alkari-halogen plasma ion irradiation by bias control nanoscale control atom molucules encapsulated nanotubes atoms-row junction encapsulated nanotubes nano-pn junction nanotube FET ダブルカソード型プラズマ源超分子構造ナノチューブ C

项目摘要

1. When a substrate covered with dispersed single-walled carbon nanotubes (SWNTs) is immersed in an alkali-fullerene plasma of Cs^+ -C_<60>^-, both of C_<60> and Cs encapsulated SWNTs (C_<60>@SWNT, Cs@SWNT) are formed as a result of accelerated-ion irradiation in an energy-controlled manner through the plasma sheath. Furthermore, the SWNT encapsulating a junction of Cs atoms on one side and C_<60> molecules on the other [(Cs/I)@SWNT] is observe to be formed in the case of applying bias voltages with polarity change.2. For the purpose of creating an ideal nano-pn junction, an alkali-halogen plasma such as Cs^+ -I^- is successfully generated using a magnetron discharge method with alkali salts. The substrate bias method leads to the generation of both the I@SWNT and junction encapsulated SWNT, (Cs/I)@SWNT.3. Electronic transport measurements reveal that C_<60>@SWNTs give rise to a p-type semiconducting property, but that Cs@SWNTs exhibit air stable n-type transport characteristics changing from p-type transport behavior via ambipolar behavior as the Cs-injection quantity inside SWNTs is increased. Moreover, Coulomb oscillations are observed under low temperatures, which is derived from the electronic structure modulated mainly by the encapsulated Cs atoms.4. In the case of I@SWNTs the threshold gate voltage of FET, which shows the p-type conductivity, is found to shift to a more positive value as the I-injection quantity is increased, indicating the strong enhancement of p-type property. Finally, the electronic transport property of (Cs/I)@SWNT is observed to behave as a diode, suggesting the formation of nano-pn junction. Thus, our evolved carbon nanotubes created by plasma ion irradiation are considered in principle to be provided with hidden potential as an ultra-super nonlinear-electronic microdevice.

1. 当覆盖有分散单壁碳纳米管（SWNT）的基材浸入 Cs^+ -C_<60>^- 的碱富勒烯等离子体中时，C_<60> 和 Cs 都封装了 SWNT（C_<60 >@SWNT、Cs@SWNT) 是通过等离子体鞘层以能量控制方式加速离子照射而形成的。此外，在施加极性变化的偏压的情况下，观察到形成了一侧封装Cs原子、另一侧封装C_<60>分子的结[(Cs/I)@SWNT]。2．为了创建理想的纳米pn结，使用碱金属盐的磁控管放电方法成功地产生了碱卤素等离子体，例如Cs^+-I^-。衬底偏置方法导致 I@SWNT 和结封装 SWNT (Cs/I)@SWNT.3 的生成。电子输运测量表明，C_<60>@SWNTs 具有 p 型半导体特性，但 Cs@SWNTs 表现出空气稳定的 n 型输运特性，随着 Cs 注入量的增加，从 p 型输运行为转变为双极性行为SWNT 内部增加。此外，在低温下观察到库仑振荡，这是由于封装的Cs原子主要调节电子结构所致。4．在 I@SWNT 的情况下，随着 I 注入量的增加，显示 p 型导电性的 FET 的阈值栅极电压会转向更正的值，表明 p 型性能的强烈增强。最后，观察到 (Cs/I)@SWNT 的电子传输特性表现为二极管，表明纳米 pn 结的形成。因此，我们通过等离子体离子辐照产生的进化碳纳米管原则上被认为具有作为超超非线性电子微型器件的潜在潜力。