Relaxation and Coherent Control of Quantum Dots

量子点的弛豫和相干控制

基本信息

批准号：
13852003
负责人：
MASUMOTO Yasuaki
金额：
$ 76.71万
依托单位：
University of Tsukuba
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (S)
财政年份：
2001
资助国家：
日本
起止时间：
2001 至 2005
项目状态：
已结题

项目摘要

(1) Dephasing of the lowest-energy electronic transition of stress-induced InGaAs quantum dots was measured by the interferometric double pulse excitation and time-integrated detection of optical-phonon sideband in their resonant-photoluminescence spectra. Homogeneous linewidth of confined excitons in CdSe and CuBr quantum dots was investigated at low temperatures by means of accumulated photon echo. Homogeneous width is universally given by the sum of "temperature-independent" term, "exciton-two level system interaction" term and "exciton-confined acoustic phonon interaction" term.(2) Spectral and temporal behavior of photoluminescence of site-selectively excited InP and InGaAs quantum dots in external electric field showed fast phonon mediated relaxation processes is much faster than predicted theoretically. This observation demonstrates the breakdown of the predicted phonon bottleneck effect.(3) Highly sensitive heterodyne-detected photon echo enabled us to observe the signal from one layer of strain-induced GaAs quantum dots and InP quantum dots. A biexcitonic beat observed in GaAs quantum dots formed in the quantum well shows the additional increase in the biexciton binding energy compared with that of the quantum well. The photon echo in InP quantum dots under the electric field showed tunneling-induced dephasing and decayed nonexponentially, reflecting its non-Markovian nature.(4) Trionic quantum beat was discovered in eletron-doped InP quantum dots and 4 kinds of quantum beats were observed in quantum dots. The study created the concept of change tunable quantum dots.(5) Electron spin relaxation in electron-doped InP quantum dots was investigated and found to reach the submillisecond range.(6) It was shown that electron spin relaxation time of 500 ps observed in p-InAs quantum dots was elongated to 4 ns under the magnetic field of 0.1 T. This shows the efficient suppression of electron spin relaxation caused by randomly oriented nuclear spins.

（1）通过干涉双重脉冲激发和在其谐振 - 光亮光光谱中的光孔侧带检测到应力诱导的INGAAS量子点最低的电子过渡。通过累积的光子回声研究了在低温下，在低温下研究了CDSE和CUBR量子点中受到的激子的均匀线宽。均匀宽度是通过“温度无关”项，“激子 - 两种水平系统相互作用”项和“激子共构的声音声子相互作用”项的总和。（2）在外部电场中，频谱和INGAAS量子点的光发光表现出了媒体介导的频谱量的光谱行为，表现出快速的媒介作用。该观察结果证明了预测的声子瓶颈效应的崩溃。（3）高度敏感的杂项检测光子回声使我们能够从一层应变诱导的GAAS量子点和INP量子点观察到信号。与量子井相比，在量子井中形成的GAAS量子点中观察到的Biexcitonic Beat显示了Biexciton结合能的额外增加。电场下INP量子点中的光子回声显示出隧道引起的去序列并衰减非偏差，反映了其非马克维亚的性质。（4）在Eletron掺杂的INP INP量子点和4种量子beats中发现了三位数量子beat，在量子点中观察到了4种量子beats。这项研究创造了可调节量子点的变化概念。（5）研究了电子掺杂的INP INP量子点的电子自旋松弛，并发现达到亚数范围。（6）表明，在0.1 t的磁场下，在4 ns的磁场下，在P-Inas量子点中观察到电子的500 ps的500 ps的自旋旋转时间为500 ps。有效地抑制了4 ns。

项目成果

期刊论文数量（266）

专著数量（0）

科研奖励数量（0）

会议论文数量（0）

专利数量（0）

Crosshatch observation in MBE-grown Be-doped InGaAs epilayer on InP

DOI：
10.1016/j.jcrysgro.2004.12.079
发表时间：
2005-05
期刊：
Journal of Crystal Growth
影响因子：
1.8
作者：
H. Bando;M. Kosuge;K. Ban;H. Yoshino;R. Takahashi;H. Okamoto;T. Okuno;Y. Masumoto
通讯作者：
H. Bando;M. Kosuge;K. Ban;H. Yoshino;R. Takahashi;H. Okamoto;T. Okuno;Y. Masumoto

半導体光非線形装置

半导体光学非线性器件

DOI：
发表时间：
2001
期刊：
影响因子：
0
作者：
通讯作者：

Luminescence quantum beats of train-induced GaAs quantum dots

列车诱导的砷化镓量子点的发光量子拍

DOI：
发表时间：
2003
期刊：
Phys.Rev.B 68-3
影响因子：
0
作者：
K Kita;K Kyuno;A Toriumi;K.Nishibayashi
通讯作者：
K.Nishibayashi

Phonon resonances in photoluminescence spectra of self-assembled quantum dots in an electric field

电场中自组装量子点光致发光光谱中的声子共振

DOI：
发表时间：
2001
期刊：
Phys. Rev. B 63・7
影响因子：
0
作者：
M.Ikezawa;K.Takemoto;LV.Ignatiev;K.Nishibayashi;Y.Masumoto;Y.Masumoto;Y.Masumoto;A.V.Fedorov;V.S.Dneprovskii;M.Sugisaki;I.A.Yugova;T.Okuno;A.V.Fedorov;Y.Masumoto;S.V.Nair;M.Sugisaki;A.V.Baranov;V.Davydov;V.Davydov;Y.Masumoto;K.Nishibayashi;M.Sugisaki;J.Zhao;I.V.Ignatiev
通讯作者：
I.V.Ignatiev

Coherent spectroscopy of semiconductor quantum dots

半导体量子点的相干光谱