Fundamental Study of GaN-on-Si Hetero-Epitaxial Substrate for Earth Environmental Preservation

硅基氮化镓异质外延衬底的地球环境保护基础研究

• 批准号: 13650014
• 负责人: OHSHIMA Naoki
• 金额: $ 2.3万
• 依托单位: Yamaguchi University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2001
• 资助国家: 日本
• 起止时间: 2001 至 2002
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-13650014/
• 关键词: GaN; γ-Al_2O_3; Si; NH_3; Molecular Beam Epitaxy; RHEED; RHEED

The GaN and compounds of AlGaN are only promising materials for high-power devices and opto-electronic devices in the ultra violet-wavelength region. Many GaN-based opto-electronic devices are demonstrated on sapphire and SiC substrate. On the other hand, the GaN-based devices on silicon substrate have not been performed regardless of many advantages of Si such as high quality, low cost, controllability of the conductivity and effectiveness for the application combined with Si-ULSI technology. It is hard to obtain high quality GaN epilayer on Si because it is easy to occur the interaction at the hetero-interface between GaN layer and Si substrate. Therfore, it has been expected to grow a device-quality GaN epilayer on Si using an appropriate buffer layer.In the present work, we have investigated the growth behavior of GaN epilayer on Si(111) and Si(100)substrates coverd with 0.6μm thick γ-Al_2O_3 epitaxial layer as an intermediate layer by NH3 gas source molecular beam epitaxy with in-situ reflection high energy electron diffraction system. It is found that the nitridation of the surface of the Si substrate is effectively suppressed with γ-Al_2O_3layer. The GaN under cubic phase was epitaxially re-grown on γ-Al_2O_3Si(100) substrate and hexagonal GaN layer with flat surface on γ-Al_2O_3Si(100)

Algan的GAN和化合物仅是超紫罗兰波长区域中高功率设备和光电设备的有前途的材料。在蓝宝石和SIC底物上展示了许多基于GAN的光电设备。另一方面，无论SI的优势如何，诸如应用程序的高质量，低成本，可控性和应用程序与Si-ulsi技术相结合的有效性，都没有执行基于GAN的基于GAN的设备。很难在SI上获得高质量的GAN发作，因为很容易在GAN层和Si基板之间的异质界面上发生相互作用。因此，预计它将使用适当的缓冲层在SI上的设备质量gan发作。在演示工作中，我们研究了Si（111）和Si（100）基板上GAN发作的生长行为，并覆盖了0.6μm厚γ-AL_2O_3层层层层层由NH3 GES源源源源为Intrymed Inderrone Eptions，该系统与NH3 GEAL EPRITION相互介绍。发现Si底物表面的硝化被γ-AL_2O_3LAYER有效抑制。立方相的GAN在γ-AL_2O_3SI（100）底物和六边形GAN层上的外延重新生长，并在γ-Al_2O_3SI上表面平坦（100）

项目成果

N. Ohshima, K. Shibata, Y. Orihashi, A. Sugihara: "Growth Process of GaN on Sapphire at High Growth Temperature by Gas Source Molecular Beam Epitaxy"Transaction of the Materials Research Society of Japan.

N. Ohshima、K. Shibata、Y. Orihashi、A. Sugihara：“通过气源分子束外延在高生长温度下在蓝宝石上生长 GaN”，日本材料研究学会会刊。