new synthesis method of a compound semiconductor containing tellurium

含碲化合物半导体的新合成方法

基本信息

批准号：
12650720
负责人：
OZAKI yoshiharu
金额：
$ 1.86万
依托单位：
SEIKEI UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

A new synthesis method of a compound semiconductor containing group VI elements S, Te, Se has been developed. These compound semiconductor has high vapor pressure. So it is difficult to control material properties precisely, and it is necessary to develop a new synthesis method which is enable to synthesize the compound semiconductor at low temperature.Metal tellurides occupy an indispensable position as a unique semiconductor which cannot replace it with silicon in the field of optical sensing devices. Apurpose of this study is establishment of the new synthesis method which gives a telluride at 200-500℃ by thermal decomposition of an organometalic compound. The telluride is a kind of a chalcogen compound and attracts big attention in microelectronic sensor devices from the viewpoint of band gap and/or geometry engineering. For multi component tellurides such as CdTe/HgTe, CdTe/ZnTe, the precise composition and defect controls are necessary in order to optimize these material functions.At present research CdTe was chosen as an object material, and an organometalic compound is used as raw materials. Apreparation method of solution-type raw materials of CdTe has been studied in detail. The solution-type raw materials are spin-coated on a substrate in order to form a precursor oxide film. The precursor oxide film was converted into a metal telluride by heat-treatment in hydrogen atmosphere. According to the developed method precise control of CdTe stoichiometry is enabled because CdTe is synthesized as low temperature as constituent atoms can hardly vaporize and diffuse. The fundamental data which are necessary for the industrialization of CdTe film production have been established.In this report the new synthesis method of compound semiconductors containing tellurium has been established using CdTe for a model material of telluride synthesis. And a preliminary study about PbTe has been also reported.

开发了一种新的含VI族元素S、Te、Se的化合物半导体的合成方法，这些化合物半导体具有较高的蒸气压，因此很难精确控制材料特性，因此有必要开发一种新的合成方法。金属碲化物作为一种独特的半导体，在光传感器件领域中占据着硅无法替代的不可或缺的地位。本研究的目的是建立碲化物的新合成方法。在通过有机金属化合物的热分解在200-500℃下进行碲化物是一种硫族化合物，从带隙和/或几何工程的角度来看，碲化物在微电子传感器器件中引起了广泛的关注。、CdTe/ZnTe，为了优化这些材料的功能，精确的成分和缺陷控制是必要的。目前研究选择CdTe作为目标材料，有机金属材料详细研究了CdTe化合物的溶液型原料的制备方法，将溶液型原料旋涂在基板上以形成前体氧化物膜。根据所开发的方法，可以精确控制 CdTe 的化学计量，因为 CdTe 是在低温下合成的，因为组成原子几乎不会蒸发和扩散。本报告建立了以CdTe为碲化物合成模型材料的含碲化合物半导体的新合成方法，并对PbTe的合成进行了初步研究。