new synthesis method of a compound semiconductor containing tellurium

含碲化合物半导体的新合成方法

基本信息

批准号：
12650720
负责人：
OZAKI yoshiharu
金额：
$ 1.86万
依托单位：
SEIKEI UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

项目摘要

A new synthesis method of a compound semiconductor containing group VI elements S, Te, Se has been developed. These compound semiconductor has high vapor pressure. So it is difficult to control material properties precisely, and it is necessary to develop a new synthesis method which is enable to synthesize the compound semiconductor at low temperature.Metal tellurides occupy an indispensable position as a unique semiconductor which cannot replace it with silicon in the field of optical sensing devices. Apurpose of this study is establishment of the new synthesis method which gives a telluride at 200-500℃ by thermal decomposition of an organometalic compound. The telluride is a kind of a chalcogen compound and attracts big attention in microelectronic sensor devices from the viewpoint of band gap and/or geometry engineering. For multi component tellurides such as CdTe/HgTe, CdTe/ZnTe, the precise composition and defect controls are necessary in order to optimize these material functions.At present research CdTe was chosen as an object material, and an organometalic compound is used as raw materials. Apreparation method of solution-type raw materials of CdTe has been studied in detail. The solution-type raw materials are spin-coated on a substrate in order to form a precursor oxide film. The precursor oxide film was converted into a metal telluride by heat-treatment in hydrogen atmosphere. According to the developed method precise control of CdTe stoichiometry is enabled because CdTe is synthesized as low temperature as constituent atoms can hardly vaporize and diffuse. The fundamental data which are necessary for the industrialization of CdTe film production have been established.In this report the new synthesis method of compound semiconductors containing tellurium has been established using CdTe for a model material of telluride synthesis. And a preliminary study about PbTe has been also reported.

已经开发了一种复合半导体的新合成方法，该方法已开发出含有VI组的组，TE，SE。这些化合物半导体具有较高的蒸气压。因此，很难准确地控制材料特性，并且有必要开发一种新的合成方法，该方法可以在低温下合成化合物半导体。MentalTellurides占据了必不可少的位置作为独特的半导体，该位置无法用光学传感器式启动的现场中的硅无法代替它。这项研究的替补是建立了新的合成方法，该方法通过有机化合物的热分解在200-500℃提供了牙脲。从带隙和/或几何工程的角度来看，牙脲是一种chalcogen化合物，景点在微电子传感器设备中引起了极大的关注。对于诸如CDTE/HGTE，CDTE/ZNTE之类的多组分柜，为了优化这些材料功能，需要精确组成和缺陷控制。在当前的研究中，选择CDTE作为对象材料，并将有机化合物用作原料。已详细研究了CDTE的溶液型原材料的临时方法。在基板上旋转溶液型原材料，以形成前体氧化物膜。通过在氢气中的热处理将前体氧化物膜转化为金属牙齿。根据开发的方法，启用了CDTE化学计量的精确控制，因为CDTE被合成为低温，因为原子几乎不会蒸发和扩散。已经建立了CDTE膜生产所必需的基本数据。在本报告中，已经使用CDTE建立了含有trinurium的复合半导体的新合成方法，用于用于telluride合成的模型材料。还报道了有关PBTE的初步研究。