Fabrication process for hybrid magnetic material and fabrication of tunnel magnetoresistive read head

混合磁性材料的制作工艺及隧道磁阻读取头的制作

基本信息

批准号：
11355001
负责人：
MIYAZAKI Terunobu
金额：
$ 23.44万
依托单位：
Tohoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (A)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2001
项目状态：
已结题

项目摘要

In order to fabricate a read head using tunnel magnetoresistive junction, optimization of the tunnel junction (layered structure, stacking sequence, optimal annealing condition, thickness of barrier layer) and micro-fabricating process have been studied. Two kinds of read head were successfully demonstrated. The main results are summarized as follows.1. The Ta30(Å)/Ni_<80>Fe_<20>(30Å)/Cu(200Å)/IrMn(100Å)CoFe(40Å)/Al-oxide/CoFe(40Å)/Ni_<80>Fe_<20>(200Å)/Ta(50Å) junction annealed at 250 ℃ for 1 h exhibited that the values of resistance times cross section and tunnel magnetoresistance ratio were 78 Ω・μm^2 and 33 %, respectively.2. Using the photolisography and Ar ion milling process, we fabricated a small junction with 3x3 μm^2. On the other hand, small junction with 0.5x0.5 μm^2 was obtained by using electron beam lithography and no damage was confirmed for the junction by comparing the transport property measured before and after micro fabrication.3. Feasibility of tunnel magnetoresistive read head with flux-guide layers was investigated for helical-scan tape storage applications. A long-range exchange coupling bias scheme, with a Cu layer and an antiferromagnet were deposited on top of free layer in the tunnel-valve element, was employed. In order to stabilize domain structures in the free layer, the long range exchange coupling biasing was combined with conventional permanent magnet bias method. The maximum output voltage of the flux guide type reader was 1.75 mV_<p-p> which was corresponding to +1.5 dB of a conventional anisotropic magnetoresistive reader. Furthermore, a tunnel magnetoresistive read head for HDD application was fabricated and an out put voltage corresponding to 10 Gb/inch^2 was realized.

为了使用隧道磁路线构成读取头，已经研究了隧道连接（分层结构，堆叠序列，最佳退火条件，屏障层的厚度）和微型制作过程的优化。成功证明了两种读取头。主要结果总结如下1。 TA30（Å）/Ni_ <80> Fe_ <20>（30Å）/CU（200Å）/IRMN（100Å）COFE（40Å）/al-Oxide/cofe（40Å）/Ni_ <80> Fe_ <20>（200Å）/TA（50Å）/TA（50Å）在250 in the the 250 the the the the the the the the the the the值的值时，电阻率和划分的值均值，截止值为250次，该值均在250 neverement and。 ω・μm^2和33％分别。2。使用摄影和铣削工艺，我们用3x3μm^2制造了一个小连接。另一方面，通过使用电子束岩性摄影获得了具有0.5x0.5μm^2的小连接，并且通过比较微型制造前后测量的传输属性，没有确认连接的损坏。3。研究了用于螺旋扫描胶带存储应用的隧道磁性电阻读取头的可行性。采用了带有CU层和抗铁磁铁的远程交换耦合偏置方案，该方案被沉积在隧道阀元件的自由层的顶部。为了稳定自由层中的域结构，将远距离交换耦合偏置与常规的永久磁铁偏置方法结合在一起。通量指南类型读取器的最大输出电压为1.75 mV_ <p-p>，对应于常规各向异性磁性电阻读取器的+1.5 dB。此外，制造了用于HDD应用的隧道磁磁性读取头，并实现了对应于10 GB/英寸^2的OUT电压。