Control of the Structure and Electronic Structure of Organic/metal Interfaces and the Exploitation of the Electronic Functions

有机/金属界面的结构和电子结构的控制以及电子功能的开发

基本信息

批准号：
10440205
负责人：
SEKI Kazuhiko
金额：
$ 9.41万
依托单位：
Nagoya University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
1999
资助国家：
日本
起止时间：
1999 至 2000
项目状态：
已结题

项目摘要

(1) The examination of organic/metal interfaces was continued from the last year. The formation of interfaces between p-sexiphenyl (6P) and Au or Mg was pursued with various electronic spectroscopic techniques, and the results indicated that the growth mode of 6P is significantly dependent on the metal, and that the metal atoms deposited onto &P surface diffuse into the 6P player, in particular in the case of Au. The possible band bending in the organic layer was examined for interfaces formed by depositing TPD onto various metals under ultrahigh vacuum. The results show that there is no band bending after the completion of the formation of an electric double layer at the interface up to 100nm thickness.(2) The origin of the enhancement of electron injection efficiency at the insertion of a very thin layer of LiF at the deposition of Al onto Alq3 as the cathode. The results indicated combined contribution of (a) the change of energy level alignment, and (b) the removal of strong chemical interaction between Al and Alq3 at direct contact.(3) The study of alkane on Au(111) surface formed by depositing Au onto mica in the last year was extended to the system of poly(vinylidene fluoride) onto clean crystalline Cu(111) surface. The formation of well-oriented film was demonstrated by infrared reflection-absorption spectroscopy and angle-resolved UV photoelectron spectroscopy. Using these data, detailed information was obtained about the film growth, organic/metal interaction at the interface, and the intramolecular energy-band dispersion relation.

（1）从去年开始进行有机/金属界面的检查。使用各种电子光谱技术追求P-二苯基（6p）和AU或MG之间的接口形成，结果表明6p的生长模式显着依赖于金属，而金属原子沉积在＆p表面弥漫到＆p表面弥漫到进入6p播放器，尤其是在AU的情况下。检查了有机层中可能的带弯曲，该界面是否通过将TPD沉积到超高真空下的各种金属上形成。结果表明，在接口厚度高达100nm的界面上形成电动双层后没有带弯曲在Al沉积到ALQ3作为阴极的沉积。结果表明（a）能量水平比对的变化以及（b）直接接触时Al和Alq3之间的强大化学相互作用的综合贡献。去年，AU上的云母延伸到了聚（乙烯基氟化物）的系统上，到清洁的晶体Cu（111）表面。通过红外反射吸收光谱和角度分辨的紫外光光学光谱法证明了良好的膜的形成。使用这些数据，获得了有关膜生长，界面上有机/金属相互作用以及分子内能带分散相关的详细信息。