Development of the Process for Electroplating with Thick Palladium for the Purpose of Suppression of Metallic Allergy

抑制金属过敏的厚钯电镀工艺的开发

• 批准号: 10650721
• 负责人: HAGI Hideki
• 金额: $ 2.18万
• 依托单位: Fukui University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650721/
• 关键词: Palladium Plating; Current Efficiency; Eyeglasses Frame; Hydrogen; Diffusion Coefficient of Hydrogen; Hydrogen Concentration; Metallic Allergy; Plating Solution; 水素分解; 電気めっき; ニッケルアレルギー; 拡散係数; パラジウム

A new electrolyte (plating bath) has been developed for palladium electroplating, NHィイD24ィエD2HィイD22ィエD2POィイD24ィエD2 (100kg/mィイD13ィエD1, NHィイD24ィエD2Cl (25kg/mィイD13ィエD1), and pure water (900ml) have been added in the NHィイD24ィエD2OH solution (100ml) constrained PdClィイD22ィエD2 (17g). Palladium was electroplated copper substrates at current densities of 20-200A/mィイD12ィエD1. The current efficiency for palladium deposition was about 95% at 20-30A/mィイD12ィエD1. The plating film at this condition was excellent in luster. The concentration of hydrogen in the palladium electroplated copper specimens was measured by using the heat extraction method, and the palladium plating films were found to contain a large amount of hydrogen. From this result, the inability to obtain thick palladium films is estimated to be the pickup of hydrogen during a plating process, and the deterioration in mechanical properties of the plating film by the hydrogen embrittlement. Then, a relation between the plating condition and the hydrogen concentration was examined. The hydrogen concentration in the plating film did not depend on film thickness. And the concentration was 120mass-ppm at 20A/mィイD12ィエD1 and 20-30mass-ppm at current densities larger than 20A/mィイD12ィエD1.In order to reduce the hydrogen concentration in the plating film, the diffusion coefficient of hydrogen, DィイD2HィエD2 in palladium electroplating films were measured by the electrochemical desorption method. The following has been understood as a result. (1) DィイD2HィエD2 in the palladium plating film was smaller than DィイD2HィエD2 in palladium bulk. (2) DィイD2HィエD2 became large by heat-treating, and DィイD2HィエD2 in the plating films heat-treated at high temperatures was identical with DィイD2HィエD2 in the bulk. (3) The main cause, that DィイD2HィエD2 in the plating films was smaller than that in the bulk, was clarified to be a residual strain in the plating film.

开发出用于钯电镀的新型电解液（镀液），NH-D24-D2H-D22-D2PO-D24-D2（100kg/m-D13-D1、NH-D24-D D2Cl（25kg/m2D13）、纯水（900ml）已加入NH2D24D2OH溶液(100ml)约束PdClD22D2(17g)以20-200A/m2D12D1的电流密度电镀铜基材，在20-30A/m2D12D1下钯沉积的电流效率约为95％。采用热提取法测定镀钯铜样品中的氢浓度，结果发现，镀钯膜中含有大量的氢，无法获得厚的钯膜。推测这是由于镀覆过程中氢的吸收，以及氢脆导致的镀膜机械性能的劣化。然后，研究了镀覆条件与氢浓度之间的关系。镀膜不依赖于膜厚，20A/m2D12D1时浓度为120mass-ppm，电流密度大于20A/m2D12D1时浓度为20-30mass-ppm。为了降低镀膜中的氢浓度，扩散系数。采用电化学方法测定钯电镀膜中氢、D2D2的含量结果可知： (1)钯镀膜中的D2D2HieD2比钯块中的D2D2HieD2小。 (2)D2HieD2由于热处理而变大。在高温下与本体中的D2D2相同。 (3) 主要。镀膜中的DiiD2HieD2比块体中的DiiD2HieD2小，由此可知其原因是镀膜中的残余应变。