Development of the Process for Electroplating with Thick Palladium for the Purpose of Suppression of Metallic Allergy

抑制金属过敏的厚钯电镀工艺的开发

• 批准号: 10650721
• 负责人: HAGI Hideki
• 金额: $ 2.18万
• 依托单位: Fukui University of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1998
• 资助国家: 日本
• 起止时间: 1998 至 1999
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-10650721/
• 关键词: Palladium Plating; Current Efficiency; Eyeglasses Frame; Hydrogen; Diffusion Coefficient of Hydrogen; Hydrogen Concentration; Metallic Allergy; Plating Solution; 水素分解; 電気めっき; ニッケルアレルギー; 拡散係数; パラジウム

A new electrolyte (plating bath) has been developed for palladium electroplating, NHィイD24ィエD2HィイD22ィエD2POィイD24ィエD2 (100kg/mィイD13ィエD1, NHィイD24ィエD2Cl (25kg/mィイD13ィエD1), and pure water (900ml) have been added in the NHィイD24ィエD2OH solution (100ml) constrained PdClィイD22ィエD2 (17g). Palladium was electroplated copper substrates at current densities of 20-200A/mィイD12ィエD1. The current efficiency for palladium deposition was about 95% at 20-30A/mィイD12ィエD1. The plating film at this condition was excellent in luster. The concentration of hydrogen in the palladium electroplated copper specimens was measured by using the heat extraction method, and the palladium plating films were found to contain a large amount of hydrogen. From this result, the inability to obtain thick palladium films is estimated to be the pickup of hydrogen during a plating process, and the deterioration in mechanical properties of the plating film by the hydrogen embrittlement. Then, a relation between the plating condition and the hydrogen concentration was examined. The hydrogen concentration in the plating film did not depend on film thickness. And the concentration was 120mass-ppm at 20A/mィイD12ィエD1 and 20-30mass-ppm at current densities larger than 20A/mィイD12ィエD1.In order to reduce the hydrogen concentration in the plating film, the diffusion coefficient of hydrogen, DィイD2HィエD2 in palladium electroplating films were measured by the electrochemical desorption method. The following has been understood as a result. (1) DィイD2HィエD2 in the palladium plating film was smaller than DィイD2HィエD2 in palladium bulk. (2) DィイD2HィエD2 became large by heat-treating, and DィイD2HィエD2 in the plating films heat-treated at high temperatures was identical with DィイD2HィエD2 in the bulk. (3) The main cause, that DィイD2HィエD2 in the plating films was smaller than that in the bulk, was clarified to be a residual strain in the plating film.

已经开发了用于钯电镀的新电解质（电平浴），NHI D24 D2HI D22PO D24 D2（100kg/milli D13 D1，NHI D24 D2CL（25kg/milli d13 D1）和纯水（900ml）在NHI D24 D24 D24 D24 D24 D24 D24 D24 D24 D24 D24 （17G）在20-200A/MY D12E D1的电流密度下进行电镀铜底物。发现钯镀膜含有大量的氢，据估计，在镀层过程中估计无法获得较厚的钯膜，并且通过氢化条件和氢浓度之间的关系。镀膜膜中的氢浓度不取决于膜厚度。并且在20A/MY MY D12E D1和20-30mass-PPM的浓度为120mass-PPM，在当前密度大于20A/MY MY MY D12E D1.IN为了降低电镀膜中的氢浓度，Palladium电镀膜中D2的氢气的扩散系数，DEDERORS的D2HIE D2是由电镀膜中测量的。结果已被理解。 （1）钯镀膜中的D2Hie D2小于钯大体中D2Hie D2。 （2）D2HIE D2通过热处理变大，在高温下进行热处理的电镀膜中的D2Hie D2与散装中的D2Hie D2相同。 （3）主要原因是，电镀膜中的D2Hie D2小于散装中的D2Hie D2，被澄清为镀膜中的残余应变。