Research on the Semiconductor Based Optical Detector for the Short-Wavelength Visible and Ultra-Violet Region.

短波长可见光和紫外区半导体光学探测器的研究。

基本信息

批准号：
08650015
负责人：
ANDO Koshi
金额：
$ 1.15万
依托单位：
TOTTORI UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (C)
财政年份：
1996
资助国家：
日本
起止时间：
1996 至 1997
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08650015/
关键词：
wide bandgap semiconductor ZnSe based Compound semiconductor MBE growth blue-ultra-violet detector photo-voltaic detector PiN detector hetero PiN detector conduction control

项目摘要

We have performed this reserch project with focussing our attentions onto four fundamental key-technologies : (i) precise controling of hetero-interfaces (ZnSe-ZnSe, ZnSeZnMgSSe systems) in MBE growth, (ii) p and n type conduction control, (iii) high quality semi-insulating ZnSe layr (active layr in device), and (iv) perfect ohmic contact layr of ZnTe-Zn-Se super lattice (SLS). Concerning the MBE growth techniques, following high quality film growth conditions are established : (1) High resistive active layr (i-layr) of ZnSe : this active layr plays a role of active layr in PiN structure optical detectors and we have established the high quality i-layr with defect density of less than 10^<13>cm^<-3>. (2) SLS contact layr : almost perfect SLS ohmic contact layr (ZnTe-ZnSe superl-lattice) with the contact resistance of less than 0.1 (ohm cm^2) is realized by adjusting the N-doping conditions in MBE growth.Based on these techniques established here, we have fabricated Heter-Structure PiN optical detectors (SLS-pZnSSe-iZnSe-nZnSe on nGaAs). Tentative performance of the PiN photo-diodes are followings : (a) Quantum Efficiency=50-60% (for light wavelength region of 460-400nm), (b) dark current=0.9-0.1 nA/cm^2 at V=20 V (this value is about one order smaller in magnitudes than the cace of Si PiN diode). As described above, this research has demonstrated a very high potential of the II-VI (ZnSe) based PiN photo-diode by MBE growth for the future short wavelength visible and ultra-violet optical regions.

We have performed this reserch project with focussing our attentions onto four fundamental key-technologies : (i) precise controling of hetero-interfaces (ZnSe-ZnSe, ZnSeZnMgSSe systems) in MBE growth, (ii) p and n type conduction control, (iii) high quality semi-insulating ZnSe layr (active layr in device), and (iv) perfect ohmic contact layr of Znte-Zn-se超级晶格（SLS）。关于MBE生长技术，建立了高质量的膜生长条件：（1）ZNSE的高电阻活性主动层（I-layr）：该活性LAIR在PIN结构光学检测器中起着活性Layr的作用，我们确定了具有小于10^<13> cm^<13> cm^<-3>的高质量I-Layr。（2）SLS接触Layr：通过调整MBE增长中的N兴奋剂条件，可以实现几乎完美的SLS欧姆接触Layr（Znte-Znse superl-lattice（Znte-Znse superl-lattice），其接触抗性小于0.1（ohm cm^2）可以实现。销照片二二极管的暂定性能如下：（a）量子效率= 50-60％（对于460-400nm的光波长区域），（b）暗电流= 0.9-0.1 na/cm^2在v = 20 v时（此值比Si Pin diode的尺寸小于一个级数）。如上所述，这项研究表明，II-VI（ZNSE）基于MBE的PIN二极管具有很高的潜力，用于未来的短波长可见和超紫罗莱ac光学区域。