Micro flow systems for semiconductor monolayr growth process

用于半导体单层生长过程的微流系统

• 批准号: 07650002
• 负责人: KURABAYASHI Toru
• 金额: $ 1.34万
• 依托单位: Tohoku University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07650002/
• 关键词: monolayr growth; micro flow control system; micro valve; corrugated diaphragm; etching stop; Au-Si eutectic bending; bakable; control fine gas flow; シリコンマイクロマシニング; 圧空バルブ; シリコンマイクロマシ-ニング; シリコンアクチュエータ; フローセンサ; 真空センサ

Bakable micro flow system with microvalve was fabricated using silicon micromachining. This microvalve uses the pneumatic actuators having corrugated diaphragms to get a large displacement of the valve plunger for large flow rate. The corrugated diaphragm has a large deflection compared to a flat diaphragm. The deflection of the diaphragm was measured by the displacement of the microscope which was focused on the diaphragm surface. The expermental results of the deflection agree approximately with the simulated results.Au-Si eutectic bonding is important for the microvalve fabrication process. We investigated Au-Si eutectic bonding and measured the bonding strength at different Au thickness.The microvalve is anodically bonded to the Kovar alloy block after the Au-Si eutectic bonding. At the beginning the microvalve was designed by using the electrostatic force and the pneumatic force. However, the electro static force control was difficult, we used the pneumatic actuators. The bakable silicon microvalve has been developed by using silicon micromachining technology, the gas flow rate could be controlled from 0.1 sccm to 35 sccm, at 25-120ﾟC,and the valve had a small leakage of about 0.08 sccm. The microvalve is expected to be applied for advanced semiconductor device fabrication processes.

使用硅微加工制造了带有微脱离子的可面带微量流量系统。该微脱离子使用具有波纹状diaphragm的气动执行器，以使阀柱塞大量位移，以实现较大的流速。与扁平的隔膜相比，瓦楞纸的隔膜具有较大的挠度。隔膜的挠度是通过关注隔膜表面的显微镜的位移来测量的。偏转一致的实验结果与模拟结果大致。AU-SI共晶粘结对于微丙求制造过程至关重要。我们研究了Au-si共晶键并测量了不同AU厚度下的键合强度。微脱离心是在Au-Si Eutectic键合后与Kovar合金块的另一个键。在开始时，微丙求由使用静电力和气动力设计。但是，静电力控制很困难，我们使用了气动执行器。可带面的硅微脱离已经通过使用硅微加工技术开发，在25-120°C下，气体流速可以从0.1 SCCM到35 SCCM控制，并且该阀的泄漏较小为0.08 SCCM。预计将对高级半导体装置制造工艺应用。

项目成果

J. Nishizawa: "Effects of TMG/AsH_3 ratio on GaAs molecular layer growth" J. Vacuum Science & Technology. B13. 1024-1029 (1995)

J. Nishizawa：“TMG/AsH_3 比例对 GaAs 分子层生长的影响”J. Vacuum Science

西澤 潤一: "GaAsの単分子層成長" 応用物理学会「半導体結晶シンポジウム」予稿隼. 9-12 (1995)

Junichi Nishizawa：“GaAs 的单层生长”日本应用物理学会“半导体晶体研讨会”论文集，Hayabusa 9-12（1995）。

D.Y.Sim: "Pneumatic Microvalve Based on Si Micromachining" T.IEE Japan. 116-E. 56-61 (1996)

D.Y.Sim：“基于硅微加工的气动微型阀”T.IEE 日本。

C.Cabuz: "Microphysical Investigations on Mechanical Structures Realized in P^+ Silice" J.Microelectromechanical Systems. 4. 109-118 (1995)

C.Cabuz：“在 P^ Silice 中实现的机械结构的微观物理研究”J.微机电系统。

Cleopatra Cabuz, Keisuke, Fukatsu, Toru, Kurabayashi and Masayoshi, Esashi: "Microphysical Investigations on Mechanical Structures Realized in P+Silicon" J.Microelectromechanical Systems. 4. 109-118 (1995)

Cleopatra Cabuz、Keisuke、Fukatsu、Toru、Kurabayashi 和 Masayoshi、Esashi：“P 硅中实现的机械结构的微观物理研究”J.Microelectrical Systems。