Layer-by-Layer Preparation and Property of Functional Ceramics with Artificial Lattices.

人工晶格功能陶瓷的层层制备及其性能。

• 批准号: 62430016
• 负责人: MIURA Y
• 金额: $ 6.59万
• 依托单位: Okayama University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1987
• 资助国家: 日本
• 起止时间: 1987 至 1990
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-62430016/
• 关键词: Ceramic artificial lattice; Electron-beam evaporation apparatus; Activated reactive evaporation; Thin films for electronics; セラミックス人工格子; 酸化亜鉛; チタン酸鉛; 誘電体; セラミック人工格子; 電子ビーム蒸着装置; 高温超電導酸化物; Y-Ba-Cu-O; Bi-Pb-Sr-Ca-Cu-O; 状能図; 高温超伝導酸化物; YーBaーCuーO

A few metals were evaporated in vacuum from each source, heated by an electron beam or a resistance heater, and were reacted with activated gases in order to deposit thin films of relevant compounds (Activated reactive evaporation, ARE, method). Employing the ARE method we have prepared several oxidefilms of artificial lattices and epitaxically grown films of single oxides, examined their structure, and measured physical properties. The results are :1) Thin oxide films of artificial lattices were prepared in the systems CoO/NiO, Fe_3O_4/CoO and Fe_3O_4/SiO_2. They had distorted superlattices, whose magnetic structures and magnetic transformation temperatures depended on their film thickness.2) CoO/SiO_X layered films were prepared. Hydrogen reduction yielded the layered Co/SiO_X films in which a layer of ultrafine particles of metallic Co were sandwiched between the SiO_X layers. The Co particles were superparamagnetic and protected by the SiO_X layers.3) Simultaneous reactive evaporat … More ion of Cu, Y and Ba yielded superconducting YBa_2Cu_3O_<7-X> films at 600ﾟC having Tc=90K and Jc=4x10^6 A・cm^<-2>.4) Though each layer of thinner films of NiO/ZnO artificial lattices took a NaCl type structure, the ZnO layer of thicker films took a Wurtzite structure.5) (100) -oriented BaTiO_3 films were epitaxically grown on a substrate, SrTiO_3/Pt. The as-grown films were ferroelectric and had a resistance >10^9 OMEGA・cm.6) We have established a routine to prepare stoichiometric PbTiO_3 with preferred orientation : c-axis oriented films were deposited on MgO (100) substrates and (111) -oriented ones on the sapphire c-planes. Those as-grown films were ferroelectric and exhibited good pyroelectricity.7) A detailed examimation was made on the mechanism of diposition c-axis oriented ZnO films on silica glass substrates. Transparent electroconductive films of Al doped ZnO were prepared. The transparent films doped with 2-5% Al could be deposited on the substrate whose temperature was kept at as lowas 150^0C, and they had specific resistivity <1x10^<-3> OMEGA・cm. Less

从每个来源的真空中蒸发了几种金属，由电子束或电阻加热器加热，并与活化的气体反应，以沉积相关化合物的薄膜（激活的反应性经济性，方法是方法）。采用这种方法，我们制作了几种人工晶格和单氧化物的外延生长的氧化物膜，检查了它们的结构并测量了物理特性。结果是：1）在系统COO/NIO，FE_3O_4/COO和FE_3O_4/SIO_2中制备了人工晶格的薄氧化物膜。他们的磁性结构和磁化温度取决于其膜的厚度。2）coo/sio_x分层膜。氢还原产生了分层的CO/SIO_X膜，其中将金属CO的超细颗粒夹在SIO_X层之间。 CO颗粒是超副磁性的，并由SIO_X层保护。3）同时反应性蒸发…更多的Cu，Y和BA离子产生了超导yba_2cu_3o_3o_3o_ <7-x>在600 c的c = 90k = 90k = 90k = 90k = 90k = 4x10^6 a a liners yba_2cu_3o_ <7-x>胶片中，但Nio/ZnO人工晶格采用了NaCl类型的结构，厚膜的ZnO层采用了Wurtzite结构。5）（100）面向的Batio_3膜是在基板上均匀生长的，在srtio_3/pt上。我们生长的电影是铁电的，具有> 10^9 Omega的电阻> 6）我们已经建立了一个例行程序，以优选的方向准备Stotoichiometric PBTIO_3：在MGO（100）基质和（111）基质上，将面向C轴的膜存放在sapphire c-plan上。那些生长的薄膜是铁电的，暴露于良好的pyroeclectricity.7）对二氧化硅玻璃底物上偶置C轴为导向的ZnO膜的机理进行了详细的检查。制备了Al掺杂的ZnO的透明电导膜。用2-5％Al掺杂的透明膜可以沉积在其温度为Lowas 150^0c的基材上，并且它们具有特异性耐药性<1x10^<-3> Omega cm。较少的

项目成果

三浦,河村,高田,小田,尾坂,坂東,寺嶋: "活性化反応蒸着法によるZnO薄膜の作製" 材料. 40. (1991)

Miura、Kawamura、Takada、Oda、Osaka、Bando、Terashima：“通过活化反应沉积法制备 ZnO 薄膜”40。（1991）。

Hitoshi Kitaguchi: "Equilibrium Phase Diagram for the System PbO-CaO-CuO" J.Materials Research. 5. (1990)

Hitoshi Kitaguchi：“PbO-CaO-CuO 系统的平衡相图”J.Materials Research。

K. Oda: J. Mater. Sci.22. 2729-2733 (1987)

K. Oda：J. Mater。

高田潤: "Bi-Pb系酸化物高温超伝導体のHIP処理" 粉体および粉末冶金. 37. 83-88 (1990)

Jun Takada：“Bi-Pb 氧化物高温超导体的 HIP 处理”粉末与粉末冶金 37. 83-88 (1990)。

Y.Miura,et.al.,: "Prepartion of ZnO Films by Activated Reactive Evaporation Method." Memoirs of the Faculty of Engineering,Okayama University. 25. 23-35 (1990)

Y.Miura 等人：“通过活化反应蒸发法制备 ZnO 薄膜”。